原标题：Infineon IPP60R040C7600 W LLC转换器解决方案

　　Infineon公司的CoolMOS™ C7是依据超级结(SJ)原理设计的高压功率MOSFET,它的导通电阻(RDS(on)低于1Ohm*mm²(40毫欧姆),VDS大于650V,MOSFET dv/dt可达到120V/ns,非常适合用于硬和软开关(PFC和高性能LLC),如大功率高性能开关电源如计算机,服务器,通信设备,UPS和太阳能电源的PFC级和PWM级.本文介绍了IPP60R040C7主要特性,性能参数,以及600W半桥LLC评估板主要特性,电路图,主要元件分布图和PCB设计图.

　　CoolMOS™ C7 is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies.

　　600V CoolMOS™ C7 series combines the experience of the leading SJMOSFET supplier with high class innovation.

　　The 600V C7 is the first technology ever with RDS(on)*A below 1Ohm*mm².

　　IPP60R040C7主要特性:

　　• Suitable for hard and soft switching (PFC and high performance LLC)

　　• Increased MOSFET dv/dt ruggedness to 120V/ns

　　• Increased efficiency due to best in class FOM RDS(on)*Eoss and RDS(on)*Qg

　　• Best in class RDS(on) /package

　　• Qualified for industrial grade applications according to JEDEC (J-STD20and JESD22)

　　IPP60R040C7优势:

　　• Increased economies of scale by use in PFC and PWM topologies in theapplication

　　• Higher dv/dt limit enables faster switching leading to higher efficiency

　　• Enabling higher system efficiency by lower switching losses

　　• Increased power density solutions due to smaller packages

　　• Suitable for applications such as server, telecom and solar

　　• Higher switching frequencies possible without loss in efficiency due tolow Eoss and Qg

　　IPP60R040C7应用:

　　PFC stages and PWM stages (TTF, LLC) for high power/performanceSMPS e.g. Computing, Server, Telecom, UPS and Solar.

　　IPP60R040C7主要性能参数:

　　采用600 V CoolMOS™ C7的600W半桥LLC评估板

　　The present 600 W Evaluation Board is a great example of a full Infineon solution, including high voltage and low voltage power devices, controllers and drivers in order to demonstrate the most flexible and effective way to design the High Voltage DC/DC stage of a Server PSU fulfilling the 80Plus® Titanium Standard.

　　Furthermore the reader will get additional information how the 600 V CoolMOS™ C7 behaves in this LLC board and what benefits will be achieved.

　　The opportunity to significantly reduce the size of power converters by increasing the switching frequency created by the MOSFET technology has recently focused topology development and optimization on the reduction of switching losses of the semiconductor devices, which are perceived as the major obstacle to maximizing the switching frequency of PWM converters.

　　This has triggered studies on the resonant power conversion, which allows minimizing the switching losses through the achievement of zero-voltage (ZVS) or zero-current (ZCS) switching behavior.

　　An important example of resonant power conversion is provided by the LLC topology, which is able to address the requirements of high efficiency and power density through the achievement of a true Zero Voltage Switching. Last but not least, its bill of material is significantly reduced compared to the other very popular soft switching topology, the phase shift full bridge. These arguments bring the LLC resonant converter more and more in usage in the server/telecom market.

　　This document will describe an analog controlled 600 W Half Bridge (HB) LLC converter designed using Infineon products.

　　This Evaluation Board shows how to design the Halfbridge LLC stage of a Server SMPS with the goal to meet 80+ Titanium Standard efficiency requirements. On this purpose there have been used state of art of CoolMOS™ technology IPP60R180C7 on the primary side and OptiMOS™ in SuperSO8 BSC010N04LS in the Synchronous Rectification secondary stage, together with the QR CoolSET™ ICE2QR2280Z, Hi-Low Side Driver 2EDL05N06PF, Low Side Gate Driver 2EDN7524Fand an LLC Controller ICE2HS01G.

　　600W半桥LLC评估板主要特性:

　　− Industry-Standard Pinout

　　− Two Independent Low-Side Gate Drivers

　　− 5 A Peak Sink/Source Output at VDD = 12 V

　　− True Low-Impedance Rail-To-Rail Output (0.7 Ω and 0.5 Ω)

　　− -5 VDC Negative Input Capability against GND-Bouncing

　　− Very Low Propagation Delay (19 ns)

　　− Typ. 1 ns Channel to Channel Delay Matching

　　− Wide Input And Output Voltage Range up to 20 V

　　− Active Low Output Driver Even on Low Power or Disabled Driver

　　− High Flexibility through different Logic Input Configurations

　　− LVTTL

　　− PG-DSO-8, PG-VDSON-8 and TSSOP-8 Package

　　− Extended Operation from -40°C to 150°C (Junction Temperature)

　　− Particularly Well-Suited for Driving Standard, Superjunction

　　− MOSFETs or GaN Power Devices

　　600W半桥LLC评估板典型应用:

　　− SMPS

　　− DC/DC Converters

　　− Motor Control

　　− Solar Power, Industrial Applications

　　图. IFX 600 W LLC演示板外形图

　　IFX 600 W LLC演示板主要元件:

　　(1) heat sink with the assembly of primary side switches IPP60R180C7

　　(2) Resonant capacitor

　　(3) LLC analog controller ICE2HS01G

　　(4) Resonant inductor

　　(5) Main DC-DC transformer

　　(6) PCB assembly of the auxiliary circuit with bias QR Flyback controller ICE2QR2280Z

　　(7) Heat sink assembly for cooling the synchronous rectifier

　　(8) Output capacitor

　　(9) Output inductor

　　(10) Half Bridge MOSFET gate driver IC2EDN7524F

　　(11) Synchronous rectifier OptiMOS™ BSC010N04LS.