原标题：On Semi NCP51705 SiC MOSFET驱动解决方案

　　On Semi公司的NCP51705是SiC MOSFET晶体管驱动器,具有最低可能的导通损耗,能给SiC MOSFET器件提供最大可能的栅极电压.由于在开态和关态提供了高峰值电流,开关损耗实现了最低化.为了改善生活可靠性,dV/dt免疫性和更快关断,NCP51705采用板上电荷泵,以产生用户可选择的负电压轨.NCP51705还提供重要的保护功能如偏压电源的欠压锁住监测和基于驱动电路结温的热关断.源和沉电流能力6A,可使用的5V基准/偏压轨,用于数字振荡器电源,可调整的欠压锁住,去饱和功能以及热关断功能(TSD).主要用来驱动SiC MOSFET晶体管,工业逆变器,马达驱动器,PFC,AC/DC和DC/DC转换器.本文介绍了NCP51705主要性,框图,低边开关配置图和半桥开关配置图,硬用电路,以及Mini 评估板NCP51705 EVB主要特性,电路图,材料清单和PCB设计图.

　　NCP51705 SiC Driver Evaluation Board for Existing or New PCB Designs

　　The NCP51705 driver is designed to primarily drive SiC MOSFET transistors. To achieve the lowest possible conduction losses, the driver is capable to deliver the maximum allowable gate voltage to the SiC MOSFET device. By providing high peak current during turn−on and turn−off, switching losses are also minimized. For improved reliability, dV/dt immunity and even faster turn−off, the NCP51705 can utilize its on−board charge pump to generate a user selectable negative voltage rail.

　　For full compatibility and to minimize the complexity of the bias solution in isolated gate drive applications the NCP51705 also provides an externally accessible 5 V rail to power the secondary side of digital or high speed opto isolators.

　　The NCP51705 offers important protection functions such as under−voltage lockout monitoring for the bias power and thermal shutdown based on the junction temperature of the driver circuit.

　　NCP51705主要性:

　　•High Peak Output Current with Split Output Stages to allow independent Turn−ON/Turn−OFF Adjustment;

　　♦ Source Capability: 6 A

　　♦ Sink Capability: 6 A

　　• Extended Positive Voltage Rating for Efficient SiC MOSFET

　　Operation during the Conduction Period

　　• User−adjustable Built−in Negative Charge Pump for Fast Turn−off and Robust dV/dt Immunity

　　• Accessible 5 V Reference / Bias Rail for Digital Oscillator Supply

　　• Adjustable Under−Voltage Lockout

　　• Desaturation Function

　　• Thermal Shutdown Function (TSD)

　　• Small & Low Parasitic Inductance QFN24 Package

　　NCP51705典型应用:

　　• Driving SiC MOSFET

　　• Industrial Inverters, Motor Drivers

　　• PFC, AC to DC and DC to DC Converters

　　图1.NCP51705框图

　　图2.NCP51705低边开关配置图

　　图3.NCP51705半桥开关配置图

　　图4.NCP51705应用电路图

　　图5.NCP51705半桥栅极驱动电路图

　　NCP51705 Mini 评估板

　　NCP51705 SiC Driver Evaluation Board for Existing or New PCB Designs

　　This document describes the use and applications for the NCP51705 SiC driver mini EVB. The EVB is designed on a four layer PCB and includes the NCP51705 driver and all the necessary drive circuitry. The EVB also includes an on−board digital isolator and the ability to solder any MOSFET or SiC MOSFET in a T0247 high voltage package. The EVB does not include a power stage and is generic from the point of view that it is not dedicated to any particular topology. It can be used in any low−side or high−side power switching application. For bridge configurations two or more of these EVBs can be configured in a totem pole type drive configuration. The EVB can be considered as an isolator+driver+T0247 discrete module.

　　图6. Mini 评估板NCP51705 EVB (35 mm x 15 mm x 5 mm)外形图

　　图7. Mini 评估板NCP51705 EVB电路图

　　Mini 评估板NCP51705 EVB材料清单: