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基于ST公司的STGAP1S gapDRIVE电隔离N-MOSFET栅极驱动解决方案

来源: 中电网
2019-03-21
类别:工业控制
eye 119
文章创建人 拍明

原标题:ST STGAP1S gapDRIVE电隔离N-MOSFET栅极驱动解决方案

  ST公司的STGAP1S gapDRIVE是电隔离N-MOSFET栅极驱动器,具有先进的保护,配置和诊断特性.驱动器驱动能力为5A,高压部分高达1500V,输入-输出延迟100ns,提供很高的PWM控制精度,主要用在600/1200V逆变器,工业驱动,DC/DC转换器,UPS设备和太阳能逆变器.本文介绍了STGAP1S gapDRIVE主要特性,框图,半桥配置应用框图以及评估板EVALSTGAP1S主要特性, 单驱动配置图,半桥驱动配置图,电路图和材料清单.

  The STGAP1S gapDRIVE™ is a galvanically isolated single gate driver for N-channel MOSFETs and IGBTs with advanced protection, configuration and diagnostic features. The architecture of the STGAP1S isolates the channel from the control and the low voltage interface circuitry through true galvanic isolation.

  The gate driver is characterized by 5 A capability, making the device also suitable for high power inverter applications such as motor drivers in industrial drives. The output driver section provides a rail-to-rail output with the possibility to use a negative gate driver supply.

  The input to output propagation delay results contained within 100 ns, providing high PWM control accuracy. Protection functions such as the Miller clamp, desaturation detection, dedicated sense pin for overcurrent detection, output 2-level turn-off, VCE overvoltage protection, UVLO and OVLO are included to easily design high reliability systems.Open drain diagnostic outputs are present and detailed device conditions can be monitored through the SPI. Each function’s parameter can be programmed via the SPI, making the device very flexible and allowing it to fit in a wide range of applications.Separate sink and source outputs provide high flexibility and bill of material reduction for external components.

  STGAP1S gapDRIVE主要特性:

   High voltage rail up to 1500 V

   Driver current capability: 5 A sink/source current at 25 ℃

   dV/dt transient immunity ± 50 V/ns in full temperature range

   Overall input/output propagation delay: 100 ns

   Separate sink and source for easy gate driving configuration

   Negative gate drive ability

   Active Miller clamp

   Desaturation detection

   SENSE input

   VCE active clamping

   Output 2-level turn-off

   Diagnostic status output

   UVLO and OVLO functions

   Programmable input deglitch filter

   Asynchronous stop command

   Programmable deadtime, with violation error

   SPI interface for parameters programming

   Temperature warning and shutdown protection

   Self-diagnostic routines for protection features

   Compact and simplified layout

   Full effective fault protection

  STGAP1S gapDRIVE应用:

   600/1200 V inverters

   Industrial drives

   UPS equipment

   DC/DC converters

   Solar inverters

  图1. STGAP1S gapDRIVE框图

  图2. STGAP1S gapDRIVE半桥配置应用框图

  评估板EVALSTGAP1S

  Demonstration board for gapDRIVE: galvanically isolated single high voltage gate driver The STGAP1S gapDRIVE™ is a galvanically isolated single gate driver for N-channel MOSFETs and IGBTs with advanced protection,configuration and diagnostic features. The architecture of the STGAP1S isolates the channel from the control and the low voltage interface circuitry through true galvanic isolation.

  The EVALSTGAP1S board allows evaluating all of the STGAP1S features while driving a power switch with a voltage rating up to 1500 V. Power switches in both TO-220 or TO-247 packages can be evaluated, and the board allows the connection of a heatsink in order to exploit the ability of the STGAP1S to handle very high power applications.

  In combination with the STEVAL-PCC009V2 communication board and the gapDRIVE™ evaluation software, the board allows to easily enable, configure or disable all of the driver’s protection and control features through the SPI interface. Advanced diagnostic is also available thanks to the driver’s status registers that can be accessed through the SPI.

  Multiple boards can be connected together and share the same logic supply voltage and control signals in order to evaluate half-bridge, interleaved or even more complex topologies. The board allows implementing the SPI daisy chain when more than one device is used.

  评估板EVALSTGAP1S 主要特性:

  High voltage rail up to 1500 V

  5 A sink/source driver current capability

  5 A active Miller clamp

  Gate driving voltage up to 36 V

  Negative gate driving ability

  Desaturation detection

  Overcurrent protection

  Output 2-level turn-off (2LTO) UVLO on each supply voltage

  Overtemperature warning and shut-down protection

  3.3/5 V logic input interface

  Optimized reference layout

  SPI with daisy chain feature for parameters programming and diagnostic

  Suitable to be used in combination with STEVAL-PCC009V2 and configuration GUI

  Fault LED indicators

  RoHS compliant

  图3.评估板EVALSTGAP1S外形图

  评估板EVALSTGAP1S材料清单:



责任编辑:HanFeng

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