封装：8-DIP (0.300u0026quot;, 7.62mm)

描述： The IR2111PBF is a high voltage high speed power MOSFET and IGBT Driver with dependent high and low-side referenced output channels designed for half-bridge applications. Proprietary HVIC and latch immune CMOS technology enables ruggedized monolithic construction. Logic input is compatible with standard CMOS outputs. The output driver features a high pulse current buffer stage designed for minimum driver cross-conduction. Internal dead-time is provided to avoid shoot-through in the output half-bridge. The floating channel can be used to drive a N-channel power MOSFET or IGBT in the high-side configuration which operates up to 600V. . Tolerant to negative transient voltage DV/DT Immune . Under-voltage lockout for both channels . CMOS Schmitt-triggered inputs with pull-down . Matched propagation delay for both channels . Internally set dead-time . High side output in phase with input

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