描述：
Military QuickRAM Up to 90,000 Usable PLD Gates QuickRAM Combining Performance, Density and Embedded RAM Device Highlights High Performance & High Density • Up to 90,000 usable PLD gates with up to 316 I/Os • 300 MHz 16-bit counters, 400 MHz datapaths, 160+ MHz FIFOs • 0.35 µm four-layer metal non-volatile CMOS process High Speed Embedded SRAM • Up to 22 dual-port RAM modules, organized in user-configurable 1,152 bit blocks • 5 ns access times, each port independently accessible • Fast and efficient for FIFO, RAM, and ROM functions Easy to Use/Fast Development Cycles • 100% routable with 100% utilization and complete pin-out stability • Variable-grain logic cells provide high performance and 100% utilization • Comprehensive design tools include high quality Verilog/VHDL synthesis Advanced I/O Capabilities • Interfaces with 3.3 V and 5.0 V devices • PCI compliant with 3.3 V and 5.0 V busses for -1/-2 speed grades • Full JTAG boundary scan • Registered I/O cells with individually controlled clocks and output enables Up to 316 I/O Pins • 316 bi-directional input/output pins, PCI-compliant for 5.0 V and 3.3 V buses for -1/-2 speed grades • Eight high-drive input/distributed network pins Eight Low-Skew Distributed Networks • Two array clock/control networks are available to the logic cell flip-flop; clock, set, and reset inputs — each can be driven by an input-only pin • Six global clock/control networks available to the logic cell; F1, clock, set, and reset inputs and the data input, I/O register clock, reset, and enable inputs as well as the output enable control—each can be driven by an input-only, I/O pin, any logic cell output, or I/O cell feedback High Performance Silicon • Input + logic cell + output total delays under 6 ns • Data path speeds over 400 MHz • Counter speeds over 300 MHz • FIFO speeds over 160+ MHz Military Reliability • Mil-STD-883 and Mil Temp Ceramic • Mil Temp Plastic - Guaranteed -55°C to 125°C
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