描述：
**Description:** The NTE2011 through NTE2015 are high–voltage, high–current Darlington arrays in a 16–Lead DIP type package and are comprised of seven silicon NPN Darlington pairs on a common monolithic sub strate. All units have open–collector outputs and integral diodes for inductive load transient suppres sion. Peak inrush currents to 600mA (NTE2011, NTE2013, NTE2014) or 750mA (NTE2012, NTE2015) are permissible, making them ideal for driving tungstun filament lamps. The NTE2011 is a general purpose array that may be used with standard bi–polar digital logic using external current limiting, or with most PMOS or CMOS directly. This device is pinned with outputs opposite inputs to facilitate printed wiring board layouts. The NTE2012 is designed for use with 14V to 25V PMOS devices. Each input has a Zener diode and resistor in series to limit the input current to a safe value in that application. The Zener diode also gives this device excellent noise immunity. **Absolute Maximum Ratings: **(TA = +25°C for any one Darlington pair unless otherwise specified) Output Voltage, VCE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V Input Voltage, VIN NTE2012, NTE2013, NTE2014 . . . . . . . . . . . . . . . . . . . . . .30V NTE2015 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15V Continuous Collector Current. IC NTE2011, NTE2013, NTE2014 . . . . . . . . . . . . . . . . . . . . . . . . . 500mA NTE2012, NTE2015 . . . . . . . . . . . . . . . . . . . . .. . . . .. . . . . . . . . . 600mA Continuous Input Current, IIN . . . . . . . . . . . . . . . . . . . . . . 25mA Power Dissipation, PD One Darlington Pair . . . . . . . . . . . . . . . . . . . . . . . . . 1W Total Device (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . .2W Operating Ambient Temperature Range, TA .. . . . . . . . . . . .. . .. –20° to +85°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
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