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							QORVO/RFMD
						

RFMD公司生产高性能射频IC，用于宽带和电缆通讯领域。生产的产品包括功率放大器、线性放大器、LNA/混合器、求积调制器/解调器、上变频器、前端设备、开关和收发器等。除了提供标准产品外，RFMD公司还为用户设计定制产品。公司拥有两座硅片工厂，其中包括全球最大的GaAsHBT生产厂。公司在美国有设五个设计中心。

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详细描述, ,RFMD’s RFDA2077 is a dual channel digital controlled variable gain amplifier featuring high linearity over the entire gain control range with noise figure less than 6.5dB in its maximum gain state. The gains of two 6-bit digital step attenuators are programmed with a serial mode control interface (SPI). The RFDA2077 is packaged in a small 7.0mm x 7.0mm leadless laminate MCM, which contains plated through thermal vias for ultra low thermal resistance. This module is easy to use with no external matching components required. , , Download RFMD’s Control Bit Generator Software ,特点,Dual Channel VGA,Frequency Range 1700MHz to 2400MHz,Full Internal Matching and No External Bias Inductors,Two 6-Bit Digital Step Attenuators,12-Bit SPI Serial Control Programming,High Channel Isolation = 50dBc,Max Gain = 12.2dB?at?1800MHz,Gain Control Range = 31.5dB (0.5dB step size),High OIP3/P1dB = +41/24.5dBm at?1800MHz,Single +5V Supply,Small 32-Pin, 7.0mm x 7.0mm, MCM,Power-up Programming

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详细描述,The SGA5389Z is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring one-micron emitters provides high F,T, and excellent thermal performance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction non-linearities results in higher suppression of intermodulation products. Only two DC-blocking capacitors, a bias resistor, and an optional RF choke are required for operation.,特点,High Gain: 15.4dB at 1950MHz,Cascadable 50Ω,Operates from Single Supply,Low Thermal Resistance Package

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详细描述,The SGA5389Z is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring one-micron emitters provides high F,T, and excellent thermal performance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction non-linearities results in higher suppression of intermodulation products. Only two DC-blocking capacitors, a bias resistor, and an optional RF choke are required for operation.,特点,High Gain: 15.4dB at 1950MHz,Cascadable 50Ω,Operates from Single Supply,Low Thermal Resistance Package

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详细描述,The SGA5489Z is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring one-micron emitters provides high F,T, and excellent thermal performance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction non-linearities results in higher suppression of intermodulation products. Only two DC-blocking capacitors, a bias resistor, and an optional RF choke are required for operation.,特点,High Gain: 17.9dB at 1950MHz,Cascadable 50Ω,Operates from Single Supply,Low Thermal Resistance Package

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详细描述,The SGB-6433 is a high performance DC-3500 MHz SiGe HBT MMIC Gain Block. It utilizes a Darlington configuration with an active bias network. The active bias network provides stable current over temperature eliminating the need for a dropping resistor. It is designed to run directly from a 5V supply and features low thermal resistance and unconditional stability. The SGB-6433 is internally matched to 50 ohms.,特点,On-Chip Active Bias Control,No Drop Resistor Required,3 x 3 QFN 16 Pin Package,P1dB: +18.5 dB @ 1950 MHz,IP3: +31.0 dBm @ 1950 MHz,Robust Class 1C ESD Rating

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详细描述,RFMD’s SGC2363Z is a high performance SiGe HBT MMIC amplifier utilizing a Darlington configuration with a patented active-bias network. The active bias network provides stable current over temperature and process Beta variations. Designed to run directly from a 3V supply, the SGC2363Z does not require a dropping resistor as compared to typical Darlington amplifiers. The SGC2363Z is designed for high linearity 3V gain block applications that require small size and minimal external components. It is internally matched to 50Ω. ,特点,Single, Fixed 3V Supply,No Dropping Resistor Required,Patented Self-Bias Circuitry,P1dB = 10.1dBm at 1950MHz,OIP3 = 23dBm at 1950MHz,Robust 1000V ESD, Class 1C HBM

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详细描述,The SGA6489Z is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring one-micron emitters provides high F,T, and excellent thermal performance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction non-linearities results in higher suppression of intermodulation products. Only two DC-blocking capacitors, a bias resistor, and an optional RF choke are required for operation.,特点,High Gain: 17.5dB at 1950MHz,Cascadable 50Ω,Operates from Single Supply,Low Thermal Resistance Package

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详细描述,RFMD’s SGC4263Z is a high performance SiGe HBT MMIC amplifier utilizing a Darlington configuration with a patented active bias network. The active bias network provides stable current over temperature and process Beta variations. Designed to run directly from a 3V supply, the SGC4263Z does not require a dropping resistor as compared to typical Darlington amplifiers. The SGC4263Z is designed for high linearity 3V gain block applications that require small size and minimal external components. It is internally matched to 50Ω.,特点,Single Fixed 3V Supply,No Dropping Resistor Required,Patented Self-Bias Circuitry,P1dB=15.1dBm at 1950MHz,OIP3=30dBm at 1950MHz,Robust 1000V ESD, Class 1C HBM

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RFHA1020PCBA-410

产品分类：

详细描述, ,The RFHA1020 is a 50V 280W high power discrete amplifier designed for L-Band pulsed radar, air traffic control and surveillance and general purpose broadband amplifier applications. Using an advanced high power density Gallium Nitride (GaN) semiconductor process, these high performance amplifiers achieve high output power, high efficiency, and flat gain over a broad frequency range in a single package. The RFHA1020 is a matched power transistor packaged in a hermetic, flanged ceramic package. The package provides excellent thermal stability through the use of advanced heat sink and power dissipation technologies. Ease of integration is accomplished through the incorporation of single, optimized matching networks that provide wideband gain and power performance in a single amplifier.,特点,Wideband Operation: 1.2GHz to 1.4GHz,Advanced GaN HEMT Technology,Advanced Heat-Sink Technology,Supports Multiple Pulse Conditions 10% to 20% Duty Cycle 100μs to 1ms Pulse Width,10% to 20% Duty Cycle,100μs to 1ms Pulse Width,Integrated Matching Components for High Terminal Impedances,50V Operation Typical Performance: Output Pulsed Power: 280W Pulse Width: 100μs, Duty Cycle 10% Small Signal Gain: 15dB High Efficiency (55%) - 40°C to 85°C Operating Temperature,Output Pulsed Power: 280W,Pulse Width: 100μs, Duty Cycle 10%,Small Signal Gain: 15dB,High Efficiency (55%),- 40°C to 85°C Operating Temperature

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详细描述, ,The RFHA1020 is a 50V 280W high power discrete amplifier designed for L-Band pulsed radar, air traffic control and surveillance and general purpose broadband amplifier applications. Using an advanced high power density Gallium Nitride (GaN) semiconductor process, these high performance amplifiers achieve high output power, high efficiency, and flat gain over a broad frequency range in a single package. The RFHA1020 is a matched power transistor packaged in a hermetic, flanged ceramic package. The package provides excellent thermal stability through the use of advanced heat sink and power dissipation technologies. Ease of integration is accomplished through the incorporation of single, optimized matching networks that provide wideband gain and power performance in a single amplifier.,特点,Wideband Operation: 1.2GHz to 1.4GHz,Advanced GaN HEMT Technology,Advanced Heat-Sink Technology,Supports Multiple Pulse Conditions 10% to 20% Duty Cycle 100μs to 1ms Pulse Width,10% to 20% Duty Cycle,100μs to 1ms Pulse Width,Integrated Matching Components for High Terminal Impedances,50V Operation Typical Performance: Output Pulsed Power: 280W Pulse Width: 100μs, Duty Cycle 10% Small Signal Gain: 15dB High Efficiency (55%) - 40°C to 85°C Operating Temperature,Output Pulsed Power: 280W,Pulse Width: 100μs, Duty Cycle 10%,Small Signal Gain: 15dB,High Efficiency (55%),- 40°C to 85°C Operating Temperature

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