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							QORVO/RFMD
						

RFMD公司生产高性能射频IC，用于宽带和电缆通讯领域。生产的产品包括功率放大器、线性放大器、LNA/混合器、求积调制器/解调器、上变频器、前端设备、开关和收发器等。除了提供标准产品外，RFMD公司还为用户设计定制产品。公司拥有两座硅片工厂，其中包括全球最大的GaAsHBT生产厂。公司在美国有设五个设计中心。

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详细描述,The RF5633 is a linear power amplifier IC designed specifically for WiMAX final or driver stage applications. The device is manufactured on an advanced InGaP Heterojunction Bipolar Transistor (HBT) process and is provided in a leadless chip carrier with a backside ground. The RF5633 is designed to maintain linearity over a wide range of temperatures and power outputs. The external match offers tunability for output power over multiple bands. RF5633 features internal input and interstage match power down mode and single power detector.,特点,Single 5.0V Power Supply,34dB Small Signal Gain (Typ.),Supports Low Gain Mode,2.5% EVM WiMAX,+28dBm 5.0V,Single Output Power Detector,Multiple Frequency Ranges,High Efficiency

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详细描述, ,The RF5652 is a High Power Amplifier that is intently specified to address IEEE 802.11b/g/n WiFi 2.4?GHz to 2.5?GHz customer premises equipment (CPE) applications; and WiMAX (2.5?GHz to 2.7GHz) CPE applications. The PA has a intergrated 3-stage Linear Power Amplier, with 30?dBm (1 Watt) linear power at PA output. This product will be housed in an 5?mm?x?5?mm QFN. ,特点,Single Supply Voltage 5.0?V,37?dB Typical Gain Across Frequency Band,POUT = 30?dBm?3?% EVM,2.4?GHz to 2.7?GHz Frequency Range,Integrated 3-stage PA

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详细描述, ,The RF5652 is a High Power Amplifier that is intently specified to address IEEE 802.11b/g/n WiFi 2.4?GHz to 2.5?GHz customer premises equipment (CPE) applications; and WiMAX (2.5?GHz to 2.7GHz) CPE applications. The PA has a intergrated 3-stage Linear Power Amplier, with 30?dBm (1 Watt) linear power at PA output. This product will be housed in an 5?mm?x?5?mm QFN. ,特点,Single Supply Voltage 5.0?V,37?dB Typical Gain Across Frequency Band,POUT = 30?dBm?3?% EVM,2.4?GHz to 2.7?GHz Frequency Range,Integrated 3-stage PA

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RF5652WMPCBA-410

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详细描述, ,The RF5652 is a High Power Amplifier that is intently specified to address IEEE 802.11b/g/n WiFi 2.4?GHz to 2.5?GHz customer premises equipment (CPE) applications; and WiMAX (2.5?GHz to 2.7GHz) CPE applications. The PA has a intergrated 3-stage Linear Power Amplier, with 30?dBm (1 Watt) linear power at PA output. This product will be housed in an 5?mm?x?5?mm QFN. ,特点,Single Supply Voltage 5.0?V,37?dB Typical Gain Across Frequency Band,POUT = 30?dBm?3?% EVM,2.4?GHz to 2.7?GHz Frequency Range,Integrated 3-stage PA

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详细描述,The RF6281 is a high-power high-efficiency linear amplifier module specifically designed for 3V handheld systems. This amplifier uses a balanced architecture which makes the PA load insensitive and therefore eliminates the need for an isolator. The device is manufactured on an advanced eighth generation GaAs HBT process and was designed for use as the final RF amplifier in 3V UMTS handheld digital cellular equipment spreadspectrum systems and other applications in the 1710MHz to 1980MHz band (Bands I II III IV IX). The RF6281 has an analog bias control pin to reduce idle current at low power levels. The RF6281 is assembled in 16-pin 4mm x 4mm laminate package.,特点,?Multiple Band Coverage (Bands I II III IV IX),?Input/Output Internally Matched at 50Ω,?27dBm Linear Output Power(HSDPA),?35% Peak Linear Efficiency (ULRMC 12.2Kbps),?24% Linear Efficiency at 16dBm,?-40dBc ACLR?at ±5MHz,?Analog Bias Control,?Load Insensitive

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产品分类：

详细描述,The RF6281 is a high-power high-efficiency linear amplifier module specifically designed for 3V handheld systems. This amplifier uses a balanced architecture which makes the PA load insensitive and therefore eliminates the need for an isolator. The device is manufactured on an advanced eighth generation GaAs HBT process and was designed for use as the final RF amplifier in 3V UMTS handheld digital cellular equipment spreadspectrum systems and other applications in the 1710MHz to 1980MHz band (Bands I II III IV IX). The RF6281 has an analog bias control pin to reduce idle current at low power levels. The RF6281 is assembled in 16-pin 4mm x 4mm laminate package.,特点,?Multiple Band Coverage (Bands I II III IV IX),?Input/Output Internally Matched at 50Ω,?27dBm Linear Output Power(HSDPA),?35% Peak Linear Efficiency (ULRMC 12.2Kbps),?24% Linear Efficiency at 16dBm,?-40dBc ACLR?at ±5MHz,?Analog Bias Control,?Load Insensitive

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详细描述, ,The RF6559 front end module is intended for use in 915MHz AMR solutions. The RF6559 addresses the need for aggressive size reduction for a typical 915MHz AMR front end design and greatly reduces the number of components outside the RF6559 thus minimizing the footprint and assembly cost of the overall solution. The RF6559 contains an integrated three stage Power Amplifier which provides 42dB of Gain and typical Power output of 28dBm. The RF6559 allows for Tx/Rx on a single Antenna via the 2 integrated SPDT switches. Tx filtering, built in Power Detector and a two stage LNA which provides a typical 32dB of Gain round out the inside of this module. All the functionality ofthe RF6559 is packaged in a 28-pin, 6mm?x?6mm laminate package with backside ground. Greatly minimizes next level board space and allows for simplified integration. ,特点,Tx Output Power: 28dBm,Tx Gain: 42dB,Integrated Single Port Rx/Tx 50? Bi-directional Transceiver Interface,LNA with Bypass Mode

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详细描述, ,The RF6559 front end module is intended for use in 915MHz AMR solutions. The RF6559 addresses the need for aggressive size reduction for a typical 915MHz AMR front end design and greatly reduces the number of components outside the RF6559 thus minimizing the footprint and assembly cost of the overall solution. The RF6559 contains an integrated three stage Power Amplifier which provides 42dB of Gain and typical Power output of 28dBm. The RF6559 allows for Tx/Rx on a single Antenna via the 2 integrated SPDT switches. Tx filtering, built in Power Detector and a two stage LNA which provides a typical 32dB of Gain round out the inside of this module. All the functionality ofthe RF6559 is packaged in a 28-pin, 6mm?x?6mm laminate package with backside ground. Greatly minimizes next level board space and allows for simplified integration. ,特点,Tx Output Power: 28dBm,Tx Gain: 42dB,Integrated Single Port Rx/Tx 50? Bi-directional Transceiver Interface,LNA with Bypass Mode

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详细描述,The RF2818 is a GPS Low Noise Amplifier with integrated SAW filters at the input and output. Low noise figure, along with high gain, achieved by the RF2818 makes it very suitable for compact GPS receivers requiring reduced front-end noise and high sensitivity. This module builds upon RFMD’s leading edge pHEMT process and integrates input matching and low loss high rejection SAW filters at both the input and output. This results in high performance and a reduced solution size. The ease of implementation simplifies the receiver design. , ,The RF2818 is packaged in a compact 3.0mm x 2.5mm x 1.0mm package with only two external components required to achieve the best-in-class performance. ,特点,Compact Footprint: 3.0mm x 2.5mm x 1.0mm,Only Two External Components Required,No External DC Blocking Capacitors Required - Lowest BOM Cost and Small Solution Size,Low Noise Figure: 1.55dB (Typ),High Gain: 14dB (Typ),Excellent Linearity IIP3: +6dBm (Typ),Integrated Input and Output SAW Filters for Optimum PCS and Cell Band Rejection:- Cell: 101dBc (Typ)- PCS: 74dBc (Typ),Operable Over Wide Supply Voltage Range: 1V to 3.6V,Adjustable Bias and Shutdown Capability

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详细描述, ,The RF2861 is a receiver front-end for CDMA cellular applications, including JCDMA and CDMA450. It is designed to amplify and downconvert RF signals, using a three gain state LNA to obtain 17dB of stepped gain control. Features include digital control of LNA gain and power down mode, along with an integrated TX LO buffer amplifier. Another feature of the chip is adjustable IIP3 of the LNA and mixer using off-chip current setting resistors to allow for minimum DC current consumption. Noise figure, IIP3, and other specs are designed to be compatible with the TIA/EIA 98D standard for CDMA cellular communications. The IC is manufactured on an advanced Silicon Germanium Bi-CMOS process and is in a 3mm x 3mm, 16-pin, QFN.,特点,3mm x 3mm LNA/Mixer Solution,Adjustable LNA and Mixer Current/IIP3,Meets IMD Tests with Three Gain States/Two Logic Control Pins,Integrated TX LO Buffer Amplifier,Full ESD Protection on all Pins

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