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							QORVO/RFMD
						

RFMD公司生产高性能射频IC，用于宽带和电缆通讯领域。生产的产品包括功率放大器、线性放大器、LNA/混合器、求积调制器/解调器、上变频器、前端设备、开关和收发器等。除了提供标准产品外，RFMD公司还为用户设计定制产品。公司拥有两座硅片工厂，其中包括全球最大的GaAsHBT生产厂。公司在美国有设五个设计中心。

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详细描述,The SGA6286Z is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring one-micron emitters provides high F,T, and excellent thermal performance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction non-linearities results in higher suppression of intermodulation products. Only two DC-blocking capacitors, a bias resistor, and an optional RF choke are required for operation.,特点,Broadband Operation: DC to 5500MHz,Cascadable 50Ω,Operates from Single Supply,Low Thermal Resistance Package

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详细描述,The SGA6289Z is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring one-micron emitters provides high F,T, and excellent thermal performance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction non-linearities results in higher suppression of intermodulation products. Only two DC-blocking capacitors, a bias resistor, and an optional RF choke are required for operation.,特点,Broadband Operation: DC to 4500MHz,Cascadable 50Ω,Operates from Single Supply,Low Thermal Resistance Package

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产品分类：

详细描述,he SGA6589Z is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring one-micron emitters provides high F,T, and excellent thermal performance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction non-linearities results in higher suppression of intermodulation products. Only two DC-blocking capacitors, a bias resistor, and an optional RF choke are required for operation.,特点,High Gain: 20dB at 1950MHz,Cascadable 50Ω,Operates from Single Supply,Low Thermal Resistance Package

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产品分类：

详细描述,The SGA7489Z is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring one-micron emitters provides high F,T, and excellent thermal performance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction non-linearities results in higher suppression of intermodulation products. Only two DC-blocking capacitors, a bias resistor, and an optional RF choke are required for operation.,特点,DC to 3000MHz Operation,Very High IF Output IP3: 39dBm at 100MHz,High Output IP3: +35.5dBm typical at 850MHz,Low Noise Figure: 3.3dB typical at 1950MHz

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产品分类：

详细描述,The SGA7489Z is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring one-micron emitters provides high F,T, and excellent thermal performance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction non-linearities results in higher suppression of intermodulation products. Only two DC-blocking capacitors, a bias resistor, and an optional RF choke are required for operation.,特点,DC to 3000MHz Operation,Very High IF Output IP3: 39dBm at 100MHz,High Output IP3: +35.5dBm typical at 850MHz,Low Noise Figure: 3.3dB typical at 1950MHz

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详细描述,RFMD’s SGA8343Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor (SiGe HBT) designed for operation from DC to 6GHz. The SGA8343Z is optimized for 3V operation but can be biased at 2V for low-voltage battery operated systems. The device provides high gain, low NF, and excellent linearity at a low cost. It can be operated at very low bias currents in applications where high linearity is not required. The matte tin finish on the lead-free package utilizes a post annealing process to mitigate tin whisker formation and is RoHS compliant per EU Directive 2002/95. This package is also manufactured with green molding compounds that contain no antimony trioxide nor halogenated fire retardants.,特点,DC to 6GHz Operation,0.9dB NFMIN at 0.9GHz,24dB GMAX at 0.9GHz,|GOPT|=0.10 at 0.9GHz,OIP3=+28dBm P1dB=+9dBm,Low Cost High Performance Versatility

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SGA8343ZPCK-EVB3

产品分类：

详细描述,RFMD’s SGA8343Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor (SiGe HBT) designed for operation from DC to 6GHz. The SGA8343Z is optimized for 3V operation but can be biased at 2V for low-voltage battery operated systems. The device provides high gain, low NF, and excellent linearity at a low cost. It can be operated at very low bias currents in applications where high linearity is not required. The matte tin finish on the lead-free package utilizes a post annealing process to mitigate tin whisker formation and is RoHS compliant per EU Directive 2002/95. This package is also manufactured with green molding compounds that contain no antimony trioxide nor halogenated fire retardants.,特点,DC to 6GHz Operation,0.9dB NFMIN at 0.9GHz,24dB GMAX at 0.9GHz,|GOPT|=0.10 at 0.9GHz,OIP3=+28dBm P1dB=+9dBm,Low Cost High Performance Versatility

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详细描述,RFMD’s SXE1089Z is a high performance pHEMT MMIC amplifier utilizing a patented self-bias Darlington topology housed in a low-cost, surface mountable SOT-89 package. The active bias network provides stable current over temperature and process thereshold voltage variations. Designed to run directly from a 5V supply, the SXE1089Z does not require a dropping resistor as compared to typical Darlington amplifiers. The SXE1089Z product is designed for high linearity 5V gain block applications that require small size and minimal external components. It is internally matched to 50?.,特点,Excellent ACP -65dBc with 9.5dBm Channel Power at?2140MHz,OIP3 = 38.5dBm at 2140MHz,P1dB = 22.6dBm at 2140MHz,Gain = 11.7dB at 1960MHz,NF = 3.2dB at 1960MHz,Single-Supply Operation: 5V at IDQ = 128mA,Broadband Internal Matching No Dropping Resistor,Patented Self-Bias Darlington Topology,Consistent Current versus Temperature,Insensitive to Process Threshold Voltage Variation

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详细描述,The SZM-2066Z is a high linearity 2.4-2.7 GHz 2W Class AB Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface mountable plastic Q-FlexN multi-chip module package. This HBT amplifier is made with InGaP on GaAs device technology and is fabricated with MOCVD for an ideal combination of low cost and high reliability. This product is specifically designed as a final or driver stage for 802.11b/g and 802.16 equipment in the 2.4-2.7 GHz bands, and it can operate with a 3V to 5V supply. The external RF output match and bias adjustability allows load line optimization for other applications over narrower bands. It features an output power detector, on/off power control, and high RF overdrive robustness.,特点,P1dB = 33.5dBm @ 5V,High Gain: 37dB,Linear Class AB Performance,Po = +26 dBm @ 2.5% EVM, Typ,Active Bias with Adjustable Current,On-chip Output Power Detector,Low Thermal Resistance,Power Supply Range = 3V to 5V

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SZM3066ZPCK-EVB1

产品分类：

详细描述,The SZM-3066Z is a high linearity 3.3-3.8 GHz 2W Class AB Heterojunction Bipolar Transistor (HBT) power amplifier housed in a low-cost surface mountable plastic Q-FlexN multi-chip module package. This HBT amplifier is made with InGaP on GaAs device technology and is fabricated with MOCVD for an ideal combination of low cost and high reliability. This product is specifically designed as a final or driver stage for 802.16 equipment in the 3.3-3.8 GHz bands, and it can operate with a 3V to 6V supply. The external RF output match and bias adjustability allows load line optimization for other applications over narrower bands. It features an output power detector, on/off power control, and high RF overdrive robustness. A 20 dB step attenuator feature can be utilized by switching the 2nd stage power up/down control.,特点,P1dB = 33.5dBm @ 5V,Three Stages of Gain: 34dB,802.11g 54Mb/s Class AB Performance,Active Bias with Adjustable Current,On-chip Output Power Detector,Low Thermal Resistance,Attenuator Step 20 dB @ Vpc2 = 0V,Robust Class 1C ESD Ratin

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