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							QORVO/RFMD
						

RFMD公司生产高性能射频IC，用于宽带和电缆通讯领域。生产的产品包括功率放大器、线性放大器、LNA/混合器、求积调制器/解调器、上变频器、前端设备、开关和收发器等。除了提供标准产品外，RFMD公司还为用户设计定制产品。公司拥有两座硅片工厂，其中包括全球最大的GaAsHBT生产厂。公司在美国有设五个设计中心。

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详细描述,The SGA5263Z is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring one-micron emitters provides high F,T, and excellent thermal performance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction non-linearities results in higher suppression of intermodulation products. Only two DC-blocking capacitors, a bias resistor, and an optional RF choke are required for operation.,特点,DC to 4500MHz Operation,Single Voltage Supply,Low Current Draw: 60mA at 3.4V Typical,High Output Intercept: 29dBm Typical at 1950MHz

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详细描述,RFMD's RFLA1018 is an analog-controlled voltage-variable gain amplifier featuring high linearity and very low noise figure. This LNA with bypass mode and variable attenuator provides over 35dB of dynamic gain range. The RFLA1018 has a 3.3V control range with maximum gain at 0V. The LNA is temperature compensated to reduce gain variation. A noise figure of 0.65dB and an IIP3 of 2dBm make this component ideal for receiver input lineups. The RFLA1018 is packaged in a small 8.0mm x 8.0mm leadless laminate MCM. This module is internally matched to 50Ω on all RF ports, making it easy to use with no external matching components required.,特点,Frequency Range 1850MHz to 2050MHz,Internally Matched to 50? on All RF Ports,Analog Voltage Variable Attenuator with 3.3V Control Range,Bypass Mode of LNA for High Dynamic Range,Max Gain = 35dB,Noise Figure of 0.65dB Typical,Gain Control Range = 35dB,High IIP3 = 2dBm,Single +5V Supply,Small 16-Pin, 8.0mm x 8.0mm, MCM

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详细描述, ,RFMD's RFLA1038 is an analog-controlled voltage, variable gain amplifier featuring high linearity and very low noise figure. This LNA with bypass mode and variable attenuator provides over 35dB of dynamic gain range. The RFLA1038 has a 3.3V analog control range with maximum gain at 0V. The LNA is temperature compensated to reduce gain variation. A noise figure of 0.65dB and an IIP3 of 2dBm make this component ideal for receiver input lineups. The RFLA1038 is packaged in a small 8.0mm?x?8.0mm leadless laminate MCM. This module is internally matched to 50? on all RF ports making it easy to use with no external matching components required.,特点,Frequency Range 1710MHz to 1785MHz,Internally Matched to 50? on All RF Ports,Analog Voltage Variable Attenuator with 3.3V Control Range,Bypass Mode of LNA for High Dynamic Range,Max Gain = 35dB,Noise Figure of 0.65dB Typical,Gain Control Range = 35dB,High IIP3 = 2dBm,Single +5V Supply,Small 16-Pin, 8.0mm x 8.0mm, Multi-Chip Module (MCM)

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详细描述,The SGA5586Z is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring one-micron emitters provides high F,T, and excellent thermal performance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction non-linearities results in higher suppression of intermodulation products. Only two DC-blocking capacitors, a bias resistor, and an optional RF choke are required for operation. ,特点,High Gain: 18.7dB at 1950MHz,Cascadable 50Ω,Operates from Single Supply,Low Thermal Resistance Package

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详细描述,The SGA6286Z is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring one-micron emitters provides high F,T, and excellent thermal performance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction non-linearities results in higher suppression of intermodulation products. Only two DC-blocking capacitors, a bias resistor, and an optional RF choke are required for operation.,特点,Broadband Operation: DC to 5500MHz,Cascadable 50Ω,Operates from Single Supply,Low Thermal Resistance Package

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详细描述,The SGA6289Z is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring one-micron emitters provides high F,T, and excellent thermal performance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction non-linearities results in higher suppression of intermodulation products. Only two DC-blocking capacitors, a bias resistor, and an optional RF choke are required for operation.,特点,Broadband Operation: DC to 4500MHz,Cascadable 50Ω,Operates from Single Supply,Low Thermal Resistance Package

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详细描述,he SGA6589Z is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring one-micron emitters provides high F,T, and excellent thermal performance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction non-linearities results in higher suppression of intermodulation products. Only two DC-blocking capacitors, a bias resistor, and an optional RF choke are required for operation.,特点,High Gain: 20dB at 1950MHz,Cascadable 50Ω,Operates from Single Supply,Low Thermal Resistance Package

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详细描述,The SGA7489Z is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring one-micron emitters provides high F,T, and excellent thermal performance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction non-linearities results in higher suppression of intermodulation products. Only two DC-blocking capacitors, a bias resistor, and an optional RF choke are required for operation.,特点,DC to 3000MHz Operation,Very High IF Output IP3: 39dBm at 100MHz,High Output IP3: +35.5dBm typical at 850MHz,Low Noise Figure: 3.3dB typical at 1950MHz

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产品分类：

详细描述,The SGA7489Z is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring one-micron emitters provides high F,T, and excellent thermal performance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction non-linearities results in higher suppression of intermodulation products. Only two DC-blocking capacitors, a bias resistor, and an optional RF choke are required for operation.,特点,DC to 3000MHz Operation,Very High IF Output IP3: 39dBm at 100MHz,High Output IP3: +35.5dBm typical at 850MHz,Low Noise Figure: 3.3dB typical at 1950MHz

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详细描述,RFMD’s SGA8343Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor (SiGe HBT) designed for operation from DC to 6GHz. The SGA8343Z is optimized for 3V operation but can be biased at 2V for low-voltage battery operated systems. The device provides high gain, low NF, and excellent linearity at a low cost. It can be operated at very low bias currents in applications where high linearity is not required. The matte tin finish on the lead-free package utilizes a post annealing process to mitigate tin whisker formation and is RoHS compliant per EU Directive 2002/95. This package is also manufactured with green molding compounds that contain no antimony trioxide nor halogenated fire retardants.,特点,DC to 6GHz Operation,0.9dB NFMIN at 0.9GHz,24dB GMAX at 0.9GHz,|GOPT|=0.10 at 0.9GHz,OIP3=+28dBm P1dB=+9dBm,Low Cost High Performance Versatility

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