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RFMD公司生产高性能射频IC，用于宽带和电缆通讯领域。生产的产品包括功率放大器、线性放大器、LNA/混合器、求积调制器/解调器、上变频器、前端设备、开关和收发器等。除了提供标准产品外，RFMD公司还为用户设计定制产品。公司拥有两座硅片工厂，其中包括全球最大的GaAsHBT生产厂。公司在美国有设五个设计中心。

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RF5602WB50PCK-410

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详细描述,The RF5602 is a linear power amplifier IC designed specifically for medium power applications. The device is manufactured on an advanced InGaP Heterojunction Bipolar Transistor (HBT) process and has been designed for use as the final RF amplifier in 802.11b/g/n access point transmitters. The device is provided in a 3mm x 3mm x 0.45mm 16-pin leadless chip carrier with a backside ground. The RF5602 is designed to maintain linearity over a wide range of supply voltages and power outputs.,特点,Single 3.3V to 5V Supply,32dB to 34dB Small Signal Gain,3% EVM (RMS) at 27dBm, 5.0V,2% EVM (RMS) at 25dBm, 4.2V,3% EVM (RMS) at 23.5dBm, 3.3V,Integrated Power Detector on Die,Multiple Frequency Ranges

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详细描述,RFMD’s SGC-6289Z is a high performance SiGe HBT MMIC amplifier utilizing a Darlington configuration with an active bias network. The active bias network provides stable current over temperature and process Beta variations. Designed to run directly from a 5V supply the SGC-6289Z does not require a dropping resistor as compared to traditional Darlington amplifiers. The SGC-6289Z product is designed for high linearity 5V gain block applications that require small size and minimal external components. It is internally matched to 50?.,特点,Single Supply Operation: 5V at ID = 83mA,No Dropping Resistor Required,Patented Self Bias Circuitry,Gain = 13.5dBm at 1950MHz,P1dB = 19.2dBm at 1950MHz,IP3 = 33.5dBm at 1950MHz,Robust 1000V ESD, Class 1C HBM

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详细描述,RFMD’s RFDA0047 is a dual channel digital controlled variable gain amplifier featuring high linearity over the entire gain control range with noise figure less than 6.5dB in its maximum gain state. The gains of two 6-bit digital step attenuators are programmed with a serial mode control interface (SPI). The RFDA0047 is packaged in a small 7.0mm x 7.0mm leadless laminate MCM, which contains plated through thermal vias for ultra-low thermal resistance. This module is easy to use with no external matching components required. , , Download RFMD’s Control Bit Generator Software ,特点,Dual Channel VGA,Frequency Range 400MHz to 2700MHz,Full Internal Matching and No External Bias Inductors,Two 6-Bit Digital Step Attenuators,12-Bit SPI Serial Control Programming,High Channel Isolation = 50dBc,Max Gain = 13dB at 900MHz,Gain Control Range = 31.5dB (0.5dB Step Size),High OIP3/P1dB = +39/19dBm at 900MHz,Single +5V Supply,Small 32-Pin, 7.0mm x 7.0mm, MCM,Power-up Programming

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详细描述,The RF5603 is a linear power amplifier IC designed specifically for WiMAX medium power applications. The device is manufactured on an advanced InGaP Heterojunction Bipolar Transistor (HBT) process and has been designed for use as the final RF amplifier in 802.16d/e transmitters. The device is provided in a 3.5mm x 3.5mm x 0.45mm 20-pin leadless chip carrier with a backside ground. The RF5603 is designed to maintain linearity over a wide range of conditions and power outputs.,特点,High Gain; 32dB,2.5% EVM (RMS) at 24dBm, 3.3V,2.5% EVM (RMS) at 26dBm, 5.0V,Internal Power Detector,Integrated Input Match

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详细描述,The RF5611 is designed specifically for high-performance WiFi applications in the 2.4GHz to 2.5GHz ISM band, including Personal Media Players (PMPs), digital cameras, and WiFi enabled handsets. The RF5611 integrates the LNA with bypass and the SP3T switch of a Front-End solution for WiFi and Bluetooth,®, combination systems. The integrated match and DC blocking capacitors on all RF Ports reduce the number of external components, keeping cost down and utilizing minimum layout area for implementation. The RF5611 is provided in a 2mm x 2mm x 0.5mm, 12-pin QFN package. This LNA + Switch front-end solution meets or exceeds the specification requirements of IEEE 802.11 b/g/n WiFi RF systems.,特点,Single Supply Voltage 3.0V to 4.5V,Integrated SP3T Switch and LNA With Bypass,Typical gain is 12dB and 1.7dB NF in RX Mode Pin-to-Pin,SP3T Switch Control Voltage is 2.1V to 4.5V (3.0V Typical)

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详细描述,RFMD’s SPB2026Z is a high linearity single-stage class AB Heterojunction Bipolar Transistor (HBT) amplifier housed in a surface-mountable plastic encapsulated package. This HBT amplifier is made with InGaP on GaAs device technology and fabricated with MOCVD for an ideal combination of low cost and high reliability. This product is well suited for use as a driver stage in macro/micro-cell infrastructure equipment or as the final output stage in pico-cell infrastructure equipment. It can run from a 3V to 6V supply. It is prematched to ~5Ω on the input for broadband performance and ease of matching at the board level. It features an input power detector, on/off power control, ESD protection, excellent overall robustness and a hand reworkable and thermally enhanced SOF-26 package. This product is RoHS and WEEE compliant.,特点,P1dB = 33.8dBm at 5V, 1960MHz ?,ACP = -45dBc with 25dBm Channel Power at 1960MHz,On-Chip Input Power Detector,Low Thermal Resistance Package,Power Up/Down Control < 1μs,Robust Class 1C ESD

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详细描述, ,The SPF5043Z is a high performance pHEMT MMIC LNA designed for operation from 50MHz to 4000MHz. The on-chip active bias network provides stable current over temperature and process threshold voltage variations. The SPF5043Z offers ultra-low noise figure and high linearity performance in a gain block configuration. Its single-supply operation and integrated matching networks make implementation remarkably simple. The high maximum input power specification makes it ideal for high dynamic range receivers.,特点,Ultra-Low Noise Figure: 0.8dB at 900MHz,Gain: 18.2dB at 900MHz,High Linearity: OIP3 = 35dBm at 1900MHz,P1dB: +22.7dBm at 1900MHz,Single-Supply Operation: 5V at IDQ = 46mA,Flexible Biasing Options: 3V to 5V, Adjustable Current,Broadband Internal Matching

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产品分类：

详细描述, ,The SPF5043Z is a high performance pHEMT MMIC LNA designed for operation from 50MHz to 4000MHz. The on-chip active bias network provides stable current over temperature and process threshold voltage variations. The SPF5043Z offers ultra-low noise figure and high linearity performance in a gain block configuration. Its single-supply operation and integrated matching networks make implementation remarkably simple. The high maximum input power specification makes it ideal for high dynamic range receivers.,特点,Ultra-Low Noise Figure: 0.8dB at 900MHz,Gain: 18.2dB at 900MHz,High Linearity: OIP3 = 35dBm at 1900MHz,P1dB: +22.7dBm at 1900MHz,Single-Supply Operation: 5V at IDQ = 46mA,Flexible Biasing Options: 3V to 5V, Adjustable Current,Broadband Internal Matching

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详细描述, ,The SPF5189Z is a high performance pHEMT MMIC LNA designed for operation from 50MHz to 4000MHz. The on-chip active bias network provides stable current over temperature and process threshold voltage variations. The SPF5189Z offers ultra-low noise figure and high linearity performance in a gain block configuration. Its single-supply operation and integrated matching networks make implementation remarkably simple. A high maximum input power specification make it ideal for high dynamic range receivers. ,特点,Ultra-Low Noise Figure = 0.60dB at 900MHz,Gain = 18.7dB at 900MHz,High Linearity: OIP3 = 39.5dBm at 1960MHz,P1dB = 22.7dBm at 1960MHz,Single-Supply Operation: 5V at IDQ = 90mA,Flexible Biasing Options: 3V to 5V Adjustable Current,Broadband Internal Matching

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SUF-1033PCK-410

产品分类：

详细描述, ,The SUF-1033 is a monolithically matched broadband high IP3 gain block covering DC to 20GHz. This pHEMT based amplifier uses a patented selfbias network that operates from a single 5V supply. It offers efficient cascadable performance in a compact 3mm x 3mm Ceramic QFN package. It is well suited for RF LO and IF driver applications.,特点,Broadband Flat Gain = 10dB,P1dB = 14dBm at 2GHz,5V Single Supply Operation,Low Gain Variation versus Temperature,50Ω I/O Low-Noise, Efficient Gain Block

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