原标题：TI LMG1210 200VGaN FET电源参考设计TIDA-01634

　　TI公司的LMG1210是200V半桥高性能氮化镓场效应晶体管(GaN FET)驱动器,超高速度可到50MHz,传输时延10ns,脉冲宽度≥ 3 ns,高边和低边匹配1.5ns,峰值源电流1.5A,主要用在高速DC/DC转换器,RF包络跟踪,D类音频放大器和E类无线充电.本文介绍了LMG1210主要特性,框图和应用框图,以及高速DC/DC转换器GaN电流级参考设计TIDA-01634主要特性,框图以及主要指标,电路图,材料清单和PCB设计图.

　　The LMG1210 is a 200-V, half-bridge highperformance gallium nitride field effect transistor(GaN FET) driver designed for applications requiringhigh switching speed, minimized dead time, as wellas high efficiency. Drive voltage is preciselycontrolled by an internal LDO to 5 V when higherauxiliary voltages are used.

　　The LMG1210 GaN driver is designed for ultra-highfrequency applications and features adjustable deadtimecapability, very small propagation delay, as wellas 1.5-ns high-side low-side matching to optimizesystem efficiency.

　　Additional parasitic capacitance across the GaN FETis minimized to less than 1 pF to reduce additionalswitching losses. An external bootstrap diode is usedto charge the high-side bootstrap capacitor to allowoptimal selection for the circuit operating conditions.

　　An internal switch turns the bootstrap diode off whenthe low side is not on, effectively preventing the highsidebootstrap from overcharging and minimizing thereverse recovery charge when a silicon diode is usedas the bootstrap diode.

　　描述

　　LMG1210 是一款 200V 半桥高性能氮化镓场效应晶体管 (GaN FET) 驱动器，专为要求高开关速度、最短死区时间以及高效率的 应用 而设计。当使用较高的辅助电压时，驱动电压由内部 LDO 精确控制至 5V。

　　LMG1210 GaN 驱动器经精心设计， 应用中 ，并 具有 可提供超高频可调节死区时间功能、极短的传播延迟以及 1.5ns 高侧/低侧匹配，以优化系统效率。

　　GaN FET 上额外的寄生电容被最小化至小于 1pF，以减少额外的开关损耗。外部自举二极管用于对高侧自举电容器充电，以便提供适用于电路工作条件的最佳选择。

　　当低侧不导通时，内部开关会关闭自举二极管，以有效防止高侧自举过度充电，并在将硅二极管用作自举二极管时将反向恢复电荷降至最低。

　　GaN 驱动器可在两种不同的模式下工作：独立输入模式 (IIM) 和 PWM 模式。在 IIM 中，每个输出都由专用输入独立控制。在 PWM 模式下，两个补偿输出信号由单个输入产生，用户可将每个沿的死区时间从 0ns 调节为 20ns。LMG1210 可在 –40°C 至 125°C 的宽温度范围内运行，并采用低电感 WQFN 封装。

　　特性

　　50MHz 的超高速运行

　　10ns 典型传播延迟

　　1.5ns 高侧至低侧匹配

　　脉宽 ≥ 3ns

　　1.5A 峰值拉电流和 3.1A 峰值灌电流

　　可调节死区时间控制功能

　　业界最高的 300V/ns 压摆率抗扰性

　　外部自举二极管可实现灵活性

　　低于 1pF 的高侧至低侧电容

　　UVLO 和过热保护

　　低电感 WQFN 封装

　　LMG1210主要特性:

　　1• Ultra-High Speed Operation of 50 MHz

　　– 10 ns Typical Propagation Delay

　　– 1.5 ns High-Side to Low-Side Matching

　　– Pulse Width ≥ 3 ns

　　• 1.5-A Peak Source and 3.1-A Peak Sink Currents

　　• Adjustable Dead-Time Control Feature

　　• Highest Slew Rate Immunity in Industry of 300V/ns

　　• External Bootstrap Diode For Flexibility

　　• High-Side to Low-Side Capacitance Less Than 1pF

　　• UVLO and Overtemperature Protection

　　• Low-Inductance WQFN Package

　　LMG1210应用:

　　• High-Speed DC-DC Converters

　　• RF Envelope Tracking

　　• Class-D Audio Amplifiers

　　• Class-E Wireless Charging

　　高速DC/DC转换器GaN电流级参考设计TIDA-01634

　　This reference design implements a multi-MHz powerstage design based on the LMG1210 half-bridge GaNdriver and GaN power HEMTs. With highly efficientswitches and flexible dead-time adjustment, thisdesign can significantly improve power density whileachieving good efficiency as well as wide controlbandwidth. This power stage design can be widelyapplied to many space-constrained and fast responserequired applications such as 5G telecom power,servers, and industrial power supplies.

　　Switching-mode power supply designers are always pursing higher power density, which requires higherfrequency and efficiency. Compared to silicon FETs, gallium nitride (GaN) and high electron mobilitytransistors (HEMTs) exhibit a lower figure of merit, smaller gate charge, faster switching, and no reverserecovery loss.

　　This reference design uses GaN power HEMTs and the LMG1210 GaN half-bridge driver to realize amulti-MHz power stage with high efficiency. The half-bridge driver allows a single PWM input withconfigurable dead time or two independent inputs for high-side and low-side gate drive. Dead-timeadjustment can be realized with two resistors for low-to-high and high-to-low transition settings from 0 nsto 20 ns. In addition, the bootstrap switching action also prevents overvoltage of high-side gate due tolarge third quadrant voltage drop of GaN HEMTs.

　　This power stage can realize 3 ns of minimum on-time and up to a 50-MHz operation frequency. Thisdesign can stand a slew rate of 300 V/ns of common mode transient and provides driver UVLO andovertemperature protection.

　　This design can be applied to many space-constrained and fast response required applications such as5G telecom power, 48-to-POL server power, and industrial power supplies

　　参考设计TIDA-01634主要特性:

　　• Compact GaN-Based Power Stage Design WithSwitching up to 50 MHz

　　• Independent PWM Inputs for High Side andLow Side, or Single PWM Input WithAdjustableDead Time

　　• Minimum Pulse Width of 3 ns

　　• High Slew Rate Immunity of 300 V/ns

　　• Driver UVLO and Overtemperature Protection

　　图.参考设计TIDA-01634外形图

　　参考设计TIDA-01634应用:

　　• High-Speed, Synchronous Buck Converters

　　• Envelope Tracking

　　• Class D Audio Amplifiers

　　• Server and Network Power Supplies

　　• Industrial Power Supplies

　　参考设计TIDA-01634主要指标:

　　参考设计TIDA-01634材料清单: