原标题：Rohm BSM080D12P2C008 1200V 80A SiC功率模块解决方案

rohm公司的BSM080D12P2C008是1200V/80A的半桥碳化硅(SiC)功率模块,包括SiC-双扩散MOS (DMOS)和SiC肖特基二极管(SBD).具有低浪涌,低开关损耗,高速可关和降低温度依赖性等特性,漏源极间电压1200V,漏极电流80A,总耗散功率600W,结温最大为175C.主要用在马达驱动如逆变器,转换器,光伏电压和风能产生,以及其电感加热设备.本文介绍了SiC MOSFET工作状态,BSM080D12P2C008主要指标和特性,电特性,电路框图, 以及评估板BSMGD3C12D24-EVK001主要特性,功能框图,相关电路和评估板电路图,材料清单和PCB设计图.

SiC (Silicon Carbide) is a compound semiconductor comprised of silicon (Si) and carbon (C). Compared to Si, SiC has ten times the dielectric breakdown field strength, three times the bandgap, and three times the thermal conductivity. Both p-type and n-type regions, which are necessary to fashion device structures in a semiconductor materials, can be formed in SiC. These properties make SiC an attractive material from which to manufacture power devices that can far exceed the performance of their Si counterparts.

SiC devices can withstand higher breakdown voltage, have lower resistivity, and can operate at higher temperature.

With dielectric breakdown field strength approximately 10 times higher than that of Si. SiC devices can be made to have much thinner drift layer and/or higher doping concentration, i.e., they have very high breakdown voltage (600V and up) and yet with very low resistance relative to silicon devices. Resistance of high-voltage devices is predominantly determined by the width of the drift region. In theory, SiC can reduce the resistance per unit area of the drift layer to 1/300 compared to Si at the same breakdown voltage.

The most popular silicon power devices for high-voltage, high-current applications are IGBT (Insulated Gate Bipolar Transistors). With IGBTs , low resistance at high breakdown voltage is achieved at the cost of switching performance. Minority carriers are injected into the drift region to reduce conduction (on-) resistance. When the transistor is turned off, it takes time for these carrier recombine and “dissipate”, thus increasing switching loss and time. In contrast, MOSFETs are majority carrier devices. Takingadvantages of SiCs higher breakdown field and higher carrier concentration, SiC MOSFET thus can combine all three desirable characteristics of power switch, i.e., high voltage, low on-resistance, and fast switching speed.

ROHMs current SiC SBD (Schottky Barrier Diode) lineup includes 600V and 1,200V; amperage rating ranges from 5A to 40A. 1,700V devices are under development.

图1.SiC MOSFET的源和漏电流通路图

Rohm公司的BSM080D12P2C008 SiC product is a half bridge module consisting of SiC-DMOS and SiC SBD from ROHM.

BSM080D12P2C008主要指标:

Drain-source Voltage[V] 1200

Drain Current[A] 80.0

Total Power Dissipation[W] 600

Junction Temperature(Max.)[C] 175

Storage Temperature (Min.)[C] -40

Storage Temperature (Max.)[C] 125

Package:Half bridge

BSM080D12P2C008主要特性:

Low surge, low switching loss.

High-speed switching possible.

Reduced temperature dependance.

图2. BSM080D12P2C008电路框图

BSM080D12P2C008应用:

Motor drive

ž Inverter, Converter

ž Photovoltaics, wind power generation.

ž Induction heating equipment.

BSM080D12P2C008电特性: (Tj=25C)

Evaluation Board for C-type Full SiC Module

评估板BSMGD3C12D24-EVK001

This evaluation board, BSMGD3C12D24-EVK001, is a gate driver board for full SiC Modules in C type housing. This evaluation board contains all the necessary components for optimal and safety driving the SiC module.

图3. 评估板BSMGD3C12D24-EVK001和SiC模块外形图

评估板BSMGD3C12D24-EVK001主要特性:

● Gate Drive

● Integrated isolated power supply

● Short Circuit Protection

● Under Voltage Protection (Power Supply Voltage)

● Under Voltage Protection (Gate Drive Positive bias Voltage)

● Over Voltage Protection (Gate Drive Positive bias Voltage)

● High-Side and Low-Side Simultaneous conduction prevention

● Control output ON/OFF

● Fault signal

● Temperature monitoring output

图4. 评估板BSMGD3C12D24-EVK001功能框图

评估板BSMGD3C12D24-EVK001电特性: