原标题：TI UCC21732 SiC－IGBT 10A单路栅极驱动器解决方案

　　TI公司的ucc21732是用于SiC/IGBT的10A源/沉增强隔离的单路栅极驱动器,距主动保护,隔离的模拟检测和高的CMTI.器件工作电压高达2121V DC,同时具有先进的保护特性,业界最好的动态性能和鲁棒性.输入侧和输出侧采用SiO2电容隔离技术,支持高达1.5-kVRMS工作电压, 12.8-kVPK浪涌免疫度,隔离层寿命大于40年,低部件/部件间歪斜,大于150V/ns的共模噪音抗扰度(CMTI). UCC21732包括最新的保护特性如快速过流和短路检测,支持并联电流检测,故障报告,有源米勒箝位,输入和输出电源欠压锁住(UVLO),以优化SiC和IGBT开关性能和鲁棒性.和PWM传感器的隔离模拟能用来检测温度或电压,进一步增加了驱动器的多样性,简化系统设计,尺寸和成本.工作结温–40C 至150C.主要用在电动汽车的牵引逆变器,板上充电器和充电桩,用于HEV/ EV的DC/DC转换器,工业马达驱动,服务器,通信和工业电源以及不间断电源(UPS).本文介绍了UCC2173主要特性,功能框图,典型应用电路图以及评估板UCC21732QDWEVM-025主要特性和电性能指标,框图,电路图,多种测试建立图,材料清单和PCB设计图.

　　The UCC21732 is a galvanic isolated single channel gate driver designed for SiC MOSFETs and IGBTs up to 2121-V DC operating voltage with advanced protection features, best-in-class dynamic performance and robustness. UCC21732 has up to ±10-A peak source and sink current.

　　The input side is isolated from the output side with SiO2 capacitive isolation technology, supporting up to 1.5-kVRMS working voltage, 12.8-kVPK surge immunity with longer than 40 years Isolation barrier life, as well as providing low part-to-part skew , >150V/ns common mode noise immunity (CMTI).

　　The UCC21732 includes the state-of-art protection features, such as fast overcurrent and short circuit detection, shunt current sensing support, fault reporting, active miller clamp, input and output side power supply UVLO to optimize SiC and IGBT switching behavior and robustness. The isolated analog to PWM sensor can be utilized for easier temperature or voltage sensing, further increasing the drivers versatility and simplifying the system design effort, size and cost.

　　UCC2173主要特性:

　　• 5.7-kVRMS single channel isolated gate driver

　　• SiC MOSFETs and IGBTs up to 2121Vpk

　　• 33-V maximum output drive voltage (VDD-VEE)

　　• ±10-A drive strength and split output

　　• 150-V/ns minimum CMTI

　　• 270-ns response time fast overcurrent protection

　　• Internal 2-level turn-off when fault happens

　　• Isolated analog sensor with PWM output for

　　– Temperature sensing with NTC, PTC or thermal diode

　　– High voltage DC-Link or phase voltage

　　• Alarm FLT on over current and reset from RST/EN

　　• Fast enable/disable response on RST/EN

　　• Reject <40-ns noise transient and pulse on input pins

　　• 12-V VDD UVLO with power good on RDY

　　– VDD UVLO 12 V

　　• Inputs/outputs with over/under-shoot transient voltage Immunity up to 5 V

　　• 130-ns (maximum) propagation delay and 30-ns (maximum) pulse/part skew

　　• SOIC-16 DW package with creepage and clearance distance > 8 mm

　　• Operating junction temperature –40C to 150C

　　UCC2173应用:

　　• Traction inverter for EVs

　　• On-board charger and charging pile

　　• DC/DC Converter for HEV/EVs

　　• Industrial motor drives

　　• Server, telecom, and industrial power supplies

　　• Uninterruptible power supplies (UPS)

　　图. UCC2173功能框图

　　评估板UCC21732QDWEVM-025

　　UCC217XX Family Driving and Protecting SiC and IGBT Power Modules and Transistors

　　This Users Guide describes the characteristics, operation and use of the UCC21732QDWEVM-025 Evaluation Module (EVM). This TI EVM provides driving and protection for popular Silicon Carbide (SiC) MOSFETs and Si IGBTs both in discrete and Power Module implementations. The EVM is using feature rich isolated driver device UCC21732 that is part of family of UCC217XX drivers. A complete schematic diagram, printed-circuit board layouts, and bill of materials are included in this document.

　　The UCC217XXQDWEVM-025 is a compact, single channel isolated gate driver board providing drive, bias voltages, protection and monitoring needed for SiC MOSFET and Si IGBT Power Modules housed in 150 x 62 x 17 mm and 106 x 62 x 30 mm packages. The board can be used with the UCC21710, UCC21732, UCC21750, or UCC21736 drivers of the UCC217XX family. This TI EVM is based on 5.7-kVrms reinforced isolation drivers UCC217XX in SOIC-16DW package with 8.0 mm creepage and clearance. The EVM includes SN6505B based isolated DC-DC transformer bias supplies. Isolated temperature and input rail monitoring is provided using analog sensor and PWM output integrated into

　　UCC217XX. Compact form factor 62 x 48 x 6.6 mm allows direct connection of two boards to drive and protect standard half-bridge modules with up to 1700 V rail.

　　评估板UCC21732QDWEVM-025主要特性:

　　• 10-A peak split sink/source drive current for fast turn ON and turn OFF time

　　• 2-W bias supply with UVLO and OVLO protection set by default at 4.5 V to 5.5 V

　　• Drive voltages by default are 17/-5 V with single 5-V input supply

　　• Drive voltages can be also programmed independently from 11 V to 19 V for turn ON and from -3.3 V to -6 V for turn OFF by using two input supplies from 3.3 V to 5.5 V

　　• Noise-immune design with CMTI >150 V/ns

　　• 5.7-kVrms reinforced isolation

　　• OC short-circuit shunt resistor sensing with two-level (UCC21732) or single level (UCC21710) soft turn-OFF protection

　　• OC signal setting either for positive or negative polarity

　　• Desat short-circuit sensing for UCC21750

　　• Active Miller clamp using external FET (UCC21732) or internal (UCC21710)

　　• Output short circuit clamp

　　• Fault feedback with reset

　　• Isolated temperature and input rail monitoring

　　评估板UCC21732QDWEVM-025应用:

　　• Solar inverters

　　• Motor drives

　　• HEV/EV chargers

　　• HEV/EV traction Inverters

　　评估板UCC21732QDWEVM-025电性能指标:

　　图. 评估板UCC21732QDWEVM-025框图