原标题：Infineon 2ED2304S06F 650V半桥栅极驱动器解决方案

　　infineon公司的2ED2304S06F是650V半桥栅极驱动器,采用该公司的薄膜SOI技术,具有极好的鲁棒性和噪音免疫性.施密特触发逻辑输入和标准的CMOS或LSTTL逻辑兼容,直到3.3V.输出驱动器具有高脉冲电流缓冲器级,以最大限度降低驱动器的交叉导通.浮点通路用来驱动高边配置的N沟功率MOSFET或IGBT,电压高达650V.此外,离线的箝位功能提供固有的保护功能.输出源/沉电流+0.36 A/-0.7 A,集成了超快低RDS(ON)的自举二极管(BSD),负瞬态电压高达-100V(脉冲宽度达300ns),典型传输时延10ns, dV/dt免疫度±50 V,栅极驱动器电源从10V到20V.两个通路欠压锁住,3.3V,5V和15V输入逻辑兼容,RoHS兼容.主要用在马达驱动,通用逆变器,电冰箱压缩机,通信和照明的离线AC/DC电源的半桥和全桥转换器.本文介绍了2ED2304S06F主要特性,典型应用框图,功能框图和 REF-Vacuum-C101-2ED SOI驱动器和真空应用参考设计主要特性和指标,框图,电路图,材料清单和PCB设计图.

　　The 2ED2304S06F is a 650-V half-bridge gate driver. Its Infineon thin-film-SOI technology provides excellent ruggedness and noise immunity. The Schmitt trigger logic inputs are compatible with standard CMOS or LSTTL logic down to 3.3 V. The output drivers features a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 650 V. Additionally, the offline clamping function provides an inherent protection of the parasitic turn-on by floating gate conditions when IC is not supplied.

　　2ED2304S06F主要特性:

　　• Infineon thin-film-SOI-technology

　　• Fully operational to +650 V

　　• Floating channel designed for bootstrap operation

　　• Output source/sink current capability +0.36 A/-0.7 A

　　• Integrated Ultra-fast, low RDS(ON) Bootstrap Diode

　　• Tolerant to negative transient voltage up to -100 V (Pulse width is up 300 ns) given by SOI-technology

　　• 10 ns typ., 60 ns max. propagation delay matching

　　• dV/dt immune ±50 V

　　• Gate drive supply range from 10 V to 20 V

　　• Undervoltage lockout for both channels

　　• 3.3 V, 5 V and 15 V input logic compatible

　　• RoHS compliant

　　2ED2304S06F 应用:

　　• Motor drives, General purpose inverters

　　• Refrigeration compressors

　　• Half-bridge and full-bridge converters in offline AC-DC power supplies for telecom and lighting

　　图1. 2ED2304S06F典型应用框图

　　图2. 2ED2304S06F功能框图

　　REF-Vacuum-C101-2ED SOI驱动器和真空应用参考设计

　　This user guide provides an overview of the reference board REF-Vacuum-C101-2ED including its main features, key data and mechanical dimensions.

　　REF-Vacuum-C101-2ED is a full-featured starter kit, turnkey low-voltage motor drive designed for high-performance, high-efficiency PMSM/BLDC motor drive applications, including all of the required elements for vacuum applications, such as IMC101T iMOTIONTM controller, 2ED2304S06F SOI half-bridge gate driver and BSC030N04NS OptiMOSTM.

　　The starter kit features and demonstrates Infineons thin-film SOI technology and advanced motion control engine (MCE 2.0) technology for low-voltage, permanent-magnet motors drive up to 120 kRPM speed, and inverter section up to a rating of 30 V and 25 A. It is optimized for major low-voltage home appliances like vacuums, fans, pumps, compressors and other low-voltage motor drive applications.

　　The REF-Vacuum-C101-2ED is part of the iMOTION™ reference design kits. It is designed to provide ready-to-use, low-voltage and high-speed vacuum solutions based on Infineons thin-film SOI technology and advanced motion control engine (MCE 2.0) technology. It allows fast prototyping and fast time to market. The board is equipped with all assembly groups for sensorless field-oriented control (FOC), and reserved interface for three digital Hall sensors, so that it can be extended to other low-voltage and high-current motor applications.

　　The block diagram of the REF-Vacuum-C101-2ED is depicted in Figure 1, which contains iMOTION™ controller IMC101T, 3 mOhm 40 V OptiMOSTM, and 2ED2304S06F half-bridge gate driver with integrated bootstrap diode.

　　This reference design includes:

　　- Gate driver IC for MOSFET

　　- Anti-reverse connection protection

　　- 12 V & 3.3 V auxiliary power supply

　　- VSP speed command potentiometer

　　- Over temperature and overcurrent protection

　　- Turnkey version sensor less & sensor FOC control

　　图3. REF-Vacuum-C101-2ED参考设计框图

　　REF-Vacuum-C101-2ED is a reference design for 24 V (like 6~7S Li battery) low-voltage motor drive applications.

　　SOI半桥栅极驱动器2ED2304S06F主要特性:

　　• Infineon thin-film SOI technology

　　• Fully operational to +650 V, floating channel designed for bootstrap operation

　　• Output source/sink current capability +0.36 A/-0.7 A

　　• Integrated ultra-fast, low RDS(ON) bootstrap diode

　　• dV/dt immune ±50 V

　　• Tolerant to negative transient voltage up to -100 V

　　• 10 ns typ., 60 ns max. propagation delay matching

　　• Integrated minimum dead time 75 ns, shoot-through prevention

　　• Gate drive supply range from 10 V to 20 V, undervoltage lockout for both channels

　　• 3.3 V, 5 V and 15 V input logic compatible

　　REF-Vacuum-C101-2ED参考设计主要特性:

　　The REF-Vacuum-C101-2ED reference design characteristics include:

　　• Input voltage 18~30 V DC (6S ~ 7S Li battery)

　　• Maximum 600 W at 25 A, 24 V DC power input with on-board cooling fan

　　• Anti-reverse connection protection

　　• VSP speed command potentiometer

　　• 3 digital Hall interface

　　• User UART for script function

　　• Overcurrent and over temperature protection, fault diagnostic LED output

　　• Low-noise, single-shunt current sample

　　• Auxiliary power supply with 12 V, 3.3 V

　　• PCB is 60 mm × 115 mm (or 60 mm × 63.5 mm if cooling fan is removed), 2 layers, 1 oz. copper

　　• RoHS compliant

　　REF-Vacuum-C101-2ED板主要指标

　　图4. REF-Vacuum-C101-2ED参考设计功能位置图(顶面)

　　图5. REF-Vacuum-C101-2ED参考设计功能位置图(底面)

　　图6. REF-Vacuum-C101-2ED参考设计系统连接图