原标题：Infineon 2EDF7275F 3300W CCM双向图腾柱PFC解决方案

　　infineon公司的EiceDRIVER™ 2Edi系列产品是双路隔离MOSFET栅极驱动器,通过无芯变压器(CT)技术提供功能(2EDFx)或增强(2EDSx)输入/输出隔离.由于具有高驱动电流,极好的共模抑制和快速信号传输,2EDi系列特别适用于驱动快速开关电源系统的中压到高压MOSFET (CoolMOS™, OptiMOS™, CoolSIC™).源/沉输出电流为4A/8A或1A/2A,高达10MHz PWM开关频率,PWM信奉传输时延典型值为37ns:通路到通路不匹配为3ns,传输时延变化为+7/-6ns.电阻可编程死区控制(DTC)范围从15ns到250ns.共模瞬态免疫度CMTI大于150V/ns,输入边欠压锁住(UVLO)情况下快速安全关断,4V或8V UVLO阈值输出电压从4.5V到20V,工作温度TJ = -40C 到 +150C.主要用在服务器,通信和工业SMPS,同步整流,砖型转换器,UPS和电池存储,以EV充电工业自动化,马达驱动和电动工具.本文介绍了2EDF7275F主要特性,框图,应用电路,以及3300W CCM双向图腾柱评估板EVAL_3K3W_TP_PFC_SIC主要特性,主板和控制板电路图,材料清单和PCB设计图.

　　The EiceDRIVER™ 2EDi is a family of fast dual-channel isolated MOSFET gate-driver ICs providing functional (2EDFx) or reinforced (2EDSx) input-to-output isolation by means of coreless transformer (CT) technology. Due to high driving current, excellent common-mode rejection and fast signal propagation, 2EDi is particularly well suited for driving medium- to high-voltage MOSFETs (CoolMOS™, OptiMOS™, CoolSIC™) in fast-switching power systems.

　　The gate drivers of the EiceDRIVER™ 2EDi product family are designed for fast-switching, medium to high power systems with MOSFET switches. They are optimized for high timing accuracy over temperature and production spread. The reliable accurate timing simplifies system design and provides better power conversion efficiency.

　　The 2EDSx, 2EDFx dual-channel reinforced (safe) and functional isolated product variants are available with different drive strengths: 4 A/8 A for low-ohmic power MOSFETs, 1 A/2 A for higher Ron MOSFETs or slower switching transients (EMI). The 1 A/2 A reinforced isolation driver can also be used as a PWM Data Coupler in combination with a non-isolated boost gate driver such as 1EDNx 4 A/8 A placed in closest proximity to the Superjunction power switches.

　　Two independent and galvanically isolated gate driver channels ensure that all 2EDi versions can be used in any possible configuration of low- and high-side switches.

　　Improved system robustness is supported by min. 150 V/ns Common Mode Transient Immunity (CMTI), PWM inputs with 18 ns noise filter, UVLO on output side including a safety self-lock-down of driver outputs in case of input UVLO (VDDI < 3 V), PWM outputs with up to 5 A peak reverse current capability and an intrinsically robust gate driver design.

　　2EDF7275F主要特性:

　　• 4 A / 8 A or 1 A / 2 A source / sink output current

　　• Up to 10 MHz PWM switching frequency

　　• PWM signal propagation delay typ. 37 ns with

　　– 3 ns channel-to-channel mismatch

　　– +7/-6 ns propagation delay variance

　　• Resistor-programmable Dead Time Control (DTC) ranging from 15 ns to 250 ns

　　• Common Mode Transient Immunity CMTI >150 V/ns

　　• Fast safety turn-off in case of input side Undervoltage Lockout (UVLO)

　　• Output supply voltage from 4.5 V to 20 V with 4 V or 8 V UVLO threshold

　　• Wide temperature operating range TJ = -40C to +150C

　　• RoHS compliant wide /narrow-body (WB/NB) DSO16 and 5mm x 5mm LGA packages

　　• Fully qualified according to JEDEC for Industrial Applications

　　Isolation and safety certificates

　　• 2EDSx with reinforced isolation:

　　– DIN V VDE V 0884-10 (2006-12) compliant with VIOTM = 8 kVpk and VIOSM = 6.25 kVpk (tested at 10kVpk)

　　– certified according to UL1577 (Ed. 5) opto-coupler component isolation standard with VISO = 5700 VRMS

　　– certified according to DIN EN 62368-1 and DIN EN 60950-1 and corresponding CQC certificates

　　– certified according to EN 61010-1 (reinforced isolation, 300 Vrms mains voltage, overvoltage category III)

　　• 2EDFx with functional isolation: Production test with 1.5 kVDC for 10 ms

　　EiceDRIVER™ 2Edi系列应用:

　　• Server, telecom and industrial SMPS

　　• Synchronous rectification, brick converters, UPS and battery storage

　　• EV charging industry automation, motor drives and power tools

　　图1. 2EDF7275F应用电路(1):5V控制器和自举高边VDDA

　　图2. EiceDRIVER™ 2EDi产品系列框图

　　评估板EVAL_3K3W_TP_PFC_SIC:3300W CCM双向图腾柱和650V CoolSiC™与 XMC™

　　The EVAL_3K3W_TP_PFC_SIC board is a system solution enabled by Infineon Technologies power semiconductors as well as drivers and microcontroller. The evaluation board consists of a bridgeless totem-pole topology and it is intended for high-end applications in which the highest efficiency is required. Furthermore, the totem-pole topology is simple and offers a reduced part count and full utilization of the PFC inductor and switches [1]. For these reasons, totem-pole PFC enables high power density at a limited system cost for high-performance systems. In addition, the EVAL_3K3W_TP_PFC_SIC board provides reverse power flow (inverter operation for grid-connected applications) due to the inherent bi-directional power flow capability of the totem-pole topology.

　　The totem-pole topology in PFC applications with CCM operation is feasible by using wide band-gap semiconductors [1]. In this case, the Infineon CoolSiC™ MOSFET in TO-247 four-pin package is used to push the efficiency to 99 percent at half-load (Figure 2). The converter operates exclusively at high-line (176 Vrms minimum, 230 Vrms nominal) in CCM with 65 kHz switching frequency.

　　This document presents a system solution based on Infineon superjunction (SJ) (CoolMOS™) and wide band-gap (CoolSiC™) power semiconductors, drivers and microcontroller for a bridgeless totem-pole Power Factor Corrector (PFC) with bi-directional capability. The EVAL_3K3W_TP_PFC_SIC board is intended for those applications which require the highest efficiency (99 percent) and high power density (73 W/in3), such as high-end servers and telecoms. In addition, the bi-directional power flow capability would allow this design to be used in battery chargers or battery formation applications. The totem pole implemented in the EVAL_3K3W_TP_PFC_SIC board operates in Continuous Conduction Mode (CCM) in both rectifier (PFC) and inverter mode, with full digital control implementation on the Infineon XMC™ 1000 series microcontroller.

　　The Infineon components used in the 3300 W bridgeless bi-directional totem-pole board are as follows:

　　· 600 V CoolMOS™ C7 SJ MOSFET and 650 V CoolSiC™ silicon carbide MOSFET

　　· 2EDF7275F isolated gate drivers (EiceDRIVER™)

　　· XMC1404 microcontroller

　　· ICE5QSAG CoolSET™ QR Flyback controller

　　· 950 V CoolMOS™ P7 SJ MOSFET

　　The PFC function to achieve bulk voltage regulation while demanding high-quality current from the grid is implemented with an Infineon XMC1404 microcontroller [2]. Further detail on PFC control implementation in the XMC™ 1000 family can be found in the application notes of other Infineon PSU and PFC evaluation boards with classic boost or dual boost topologies [3][4][5].

　　The 3300 W bridgeless bi-directional (PFC/AC-DC and inverter/AC-DC) totem-pole presented in this application note is a system solution developed with Infineon power semiconductors as well as Infineon drivers and controllers. The Infineon devices used in the implementation of the EVAL_3K3W_TP_PFC_SIC board are listed below.

　　· 64 mΩ 650 V CoolSiC™ (IMZA65R048M1) in TO-247 four-pin package, as totem-pole PFC high-frequency switches

　　· 17 mΩ 600 V CoolMOS™ C7 (IPW60R017C7) in TO-247 package, for the totem-pole PFC return path (low-frequency bridge)

　　· 2EDF7275F isolated gate drivers (EiceDRIVER™)

　　· ICE5QSAG QR Flyback controller and 950 V CoolMOS™ P7 (IPU95R3K7P7) for the bias auxiliary supply

　　· XMC1404 microcontroller for PFC control implementation

　　A simplified block diagram of the bridgeless topology with the mentioned devices from the Infineon portfolio is shown in Figure 3. The diode bridge in front of the totem-pole PFC converter is meant to be a current path for start-up or surge conditions and it is not part of the current path during the steady-state converter operation. The power flow direction, which will select the converter operation – forward power flow or PFC operation versus reverse power flow or inverter operation – can be selected by a switch connected to the XMC™ microcontroller as a digital input pin.

　　图3. 评估板EVAL_3K3W_TP_PFC_SIC外形图

　　图4. 评估板EVAL_3K3W_TP_PFC_SIC简化框图

　　图5. 评估板EVAL_3K3W_TP_PFC_SIC不同部分位置图