基于Fairchild公司的FSB50660SF 200W三相逆变器参考设计
原标题:Fairchild FSB50660SF 200W三相逆变器参考设计
Fairchild公司的FSB50660SF和FSB50660SFT是基于SuperFET MOSFET (SuperFET)技术的Motion SPM5 SuperFET系列产品,包含有带温度检测的六个SuperFET MOSFET,三个半桥栅极驱动HVIC和三个自举二极管,UL认证No. E209204,主要用于小功率交流马达驱动如电冰箱,风扇和电泵.本文介绍了FSB50660SF和FSB50660SFT主要特性,功能框图表,应用电路以及200W三相马达驱动参考设计主要特性,电路图和PCB设计参考图.
FSB50660SF and FSB50660SFT are a Motion SPM5 SuperFET Series Based on Super Junction MOSFET (SuperFET) Technology as a Compact Inverter Solution for Small Power Motor Drive Applications Such as Refrigerators, Fans and Pumps. FSB50660SF and FSB50660SFT Contains Six SuperFET MOSFETs, Three Half-Bridge Gate Drive HVICs with Temperature Sensing, and Three Bootstrap Diodes in a Compact Package Fully Isolated and Optimized for Thermal Performance. Especially, Adopted SuperFET MOSFETs have Fast Trr Characteristics for Body-Diode. FSB50660SF and FSB50660SFT Features Low Electromagnetic Interference(EMI) Characteristics Through Optimizing Switching Speed and Reducing Parasitic Inductance. Since FSB50660SF and FSB50660SFT Employs MOSFETs as Power Switches, It Povides Much More Ruggedness and Larger Safe Operating Area (SOA) than IGBT-Based Power Modules. FSB50660SF and FSB50660SFT are the Right Solution for Compact and Reliable Inverter Designs Where the Assembly Space is Constrained.
FSB50660SF和FSB50660SFT主要特性:
UL Certified No. E209204
600 V RDS(on)= 700 mΩ(Max) SuperFET MOSFET 3-Phase Inverter Including HVICs
Three Separate Open-Source Pins from Low Side MOSFETs for Three Leg Current Sensing
HVIC for Gate Driving and Undervoltage Protection
Active-High Interface, Can Work With 3.3 V / 5 V Logic
Optimized for Low Electromagnetic Interference
Isolation Voltage Rating of 1500 Vrms for 1 min.
Temperature Sensing Built in HVIC
Embedded Bootstrap Diode in the Package
RoHS Compliant
FSB50660SF应用:
• 3-Phase Inverter Driver for Small Power AC Motor Drives
图1. FSB50660SF框图
图2. FSB50660SF应用电路
200W三相马达驱动参考设计
This reference design supports designs using Fairchild’s Motion SPM® 5 SuperFET® series of products. It should be used in conjunction
200W三相马达驱动参考设计主要特性:
600 V RDS(ON)=530 mΩ / 700 mΩ (Max.) 3-Phase SuperFET Inverter Bridge, including High Voltage Integrated Circuit (HVIC)
3 Divided Negative DC-Link Terminals for Inverter Current-Sensing Application
HVIC for Gate Driving and Under-Voltage Lockout (UVLO) Protection
Optimized for Low Electromagnetic Interference
Embedded Bootstrap Diode in Package
Integrated Temperature-Sensing Function (Linear Voltage Output by Temperature) in HVIC
Isolation Voltage Rating of 1500 VRMS for 1 Minute
责任编辑:HanFeng
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