描述：Description,The W631GG8KB is a 1G bits DDR3 SDRAM and speed involving -11/-12/-15 and -15I Status: Mass Production,Features,Power Supply: VDD, VDDQ = 1.5 V ± 0.075 V,Double Data Rate architecture: two data transfers per clock cycle,Eight internal banks for concurrent operation,8 bit prefetch architecture,CAS Latency: 6, 7, 8, 9, 10, 11 and 13,Burst length 8 (BL8) and burst chop 4 (BC4) modes: fixed via mode register (MRS) or selectable On- The-Fly (OTF),Programmable read burst ordering: interleaved or nibble sequential,Bi-directional, differential data strobes (DQS and DQS#) are transmitted / received with data,Edge-aligned with read data and center-aligned with write data,DLL aligns DQ and DQS transitions with clock,Differential clock inputs (CK and CK#),Commands entered on each positive CK edge, data and data mask are referenced to both edges of a differential data strobe pair (double data rate),Posted CAS with programmable additive latency (AL = 0, CL - 1 and CL - 2) for improved command, address and data bus efficiency,Read Latency = Additive Latency plus CAS Latency (RL = AL + CL),Auto-precharge operation for read and write bursts,Refresh, Self-Refresh, Auto Self-refresh (ASR) and Partial array self refresh (PASR),Precharged Power Down and Active Power Down,Data masks (DM) for write data,Programmable CAS Write Latency (CWL) per operating frequency,Write Latency WL = AL + CWL,Multi purpose register (MPR) for readout a predefined system timing calibration bit sequence,System level timing calibration support via write leveling and MPR read pattern,ZQ Calibration for output driver and ODT using external reference resistor to ground,Asynchronous RESET# pin for Power-up initialization sequence and reset function,Programmable on-die termination (ODT) for data, data mask and differential strobe pairs,Dynamic ODT mode for improved signal integrity and preselectable termination impedances during writes,1K Byte page size,Interface: SSTL_15