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基于Infineon公司的IPW60R037P73kW双相LLC电源解决方案

来源: 中电网
2018-09-27
类别:电源管理
eye 532
文章创建人 拍明

原标题:Infineon IPW60R037P73kW双相LLC电源解决方案

  infineon公司的IPW60R037P7是600V CoolMOSª P7功率晶体管,组合了快速开关SJ MOSFET和极易使用的特性,其极低的开关损耗和导通损耗是得开关电源有更高的效率,更小的体积和更冷静,极好的ESD>2kV (HBM),主要用在PFC,硬开关PWM和谐振开关电源级如PC,Silverbox,适配器, LCD & PDP TV,照明,服务器,通信和UPS.本文介绍了IPW60R037P7主要特性和优势,以及3.0kW双LLC 评估板EVAL_3KW_2LLC_P7_47主要特性,电路图和数字控制板XMC4400-F64K512 AB主要特性,电路图以及PCB设计图.

  描述:

  The 600V CoolMOS™ P7 superjunction (SJ) MOSFET is the successor to the 600V CoolMOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge (Q G) of the CoolMOS™ 7th generation platform ensure its high efficiency.

  特征描述:

  Efficiency

  600V P7 enables excellent FOM R DS(on)xE oss andR DS(on)xQ G

  Ease-of-use

  Integrated ESD diode from 180mN and above R DS(on)s

  Integrated gate resistor R G

  Rugged body diode

  Wide portfolio in through hole and surface mount packages

  Both standard grade and industrial grade parts are available

  优势:

  Efficiency

  Excellent FOMs R DS(on)xQ G/R DS(on)xE oss enable higher efficiency

  Ease-of-use

  Ease-of-use in manufacturing environments by stopping ESD failures occurring

  Integrated R G reduces MOSFET oscillation sensitivity

  MOSFET is suitable for both hard and resonant switching topologies such as PFC and LLC

  Excellent ruggedness during hard commutation of the body diode seen in LLC topology

  Suitable for a wide variety of end applications and output powers

  Parts available suitable for consumer and industrial applications

  目标应用:

  TV power supply

  Industrial SMPS

  Server

  Telecom

  Lighting

  指标参数

ParametricsIPW60R037P7
Budgetary Price €€/1k4.58 
ID   max 76.0 A
ID (@25°C)   max 76.0 A
IDpuls   max 280.0 A
MountingTHT
Operating Temperature   min  max -55.0 °C   150.0 °C
Ptot   max 255.0 W
PackageTO-247
Pin Count3.0 Pins
PolarityN
QG 121.0 nC
QG (typ @10V)121.0 nC
Qgd 37.0 nC
RDS (on)   max 37.0 mΩ
RDS (on) (@10V)   max 37.0 mΩ
Rth 0.49 K/W
RthJA   max 62.0 K/W
RthJC   max 0.49 K/W
Special Featuresprice/performance
VDS   max 600.0 V
VGS(th)   min  max 3.0 V   4.0 V

  The CoolMOS™ 7th generation platform is a revolutionary technology forhigh voltage power MOSFETs, designed according to the superjunction(SJ) principle and pioneered by Infineon Technologies. The 600VCoolMOS™ P7 series is the successor to the CoolMOS™ P6 series. Itcombines the benefits of a fast switching SJ MOSFET with excellent easeof use, e.g. very low ringing tendency, outstanding robustness of bodydiode against hard commutation and excellent ESD capability.

  Furthermore, extremely low switching and conduction losses makeswitching applications even more efficient, more compact and muchcooler.

  IPW60R037P7主要特性:

  • Suitable for hard and soft switching (PFC and LLC) due to an outstandingcommutation ruggedness

  • Significant reduction of switching and conduction losses

  • Excellent ESD robustness >2kV (HBM) for all products

  • Better RDS(on)/package products compared to competition enabled by alow RDS(on)*A (below 1Ohm*mm²)

  • Large portfolio with granular RDS(on) selection qualified for a variety ofindustrial and consumer grade applications according to JEDEC (J-STD20

  and JESD22)

  IPW60R037P7优势:

  • Ease of use and fast design-in through low ringing tendency and usageacross PFC and PWM stages

  • Simplified thermal management due to low switching and conductionlosses

  • Increased power density solutions enabled by using products withsmaller footprint and higher manufacturing quality due to >2 kV ESDprotection

  • Suitable for a wide variety of applications and power ranges

  IPW60R037P7应用:

  PFC,hard switching PWM and resonant switching power stages. e.g.PC

  Silverbox, Adapter, LCD & PDP TV, Lighting, Server,Telecom& UPS

  3.0kW双LLC 评估板EVAL_3KW_2LLC_P7_47 TO247

  The “EVAL_3KW_2LLC_P7_47“ - Evaluation Board shows how to design a dual phase LLC system solution of a Server SMPS with the target to meet 80+ Titanium Standard efficiency requirements. On this purpose there has been applied latest CoolMOS™ technology IPP60R037P7 600V Power MOSFET on the primary side and OptiMOS™ Low Voltage Power MOSFET in SuperSO8 BSC093N15NS5 in the synchronous rectification secondary stage, in combination with QR CoolSET™ ICE2QR2280Z, 1EDI60N12AF EiceDRIVER™ high voltage, high speed driver ICs for HV MOSFETs, Low Side Gate Driver 2EDN7524R for SR MOSFETs and digital LLC Controller XMC4400.

评估板EVAL_3KW_2LLC_P7_47外形图

  图1.评估板EVAL_3KW_2LLC_P7_47外形图

  评估板EVAL_3KW_2LLC_P7_47主要特性:

  ›Output voltage: 44 – 58 VDC

  ›Output current max: 55A

  ›Peak efficiency @ 50% load > 98.4%

  ›Efficiency @ 10% load > 97%

评估板EVAL_3KW_2LLC_P7_47主要部件分布图

  图2.评估板EVAL_3KW_2LLC_P7_47主要部件分布图

  评估板EVAL_3KW_2LLC_P7_47数字控制板XMC4400-F64K512 AB

  数字控制板XMC4400-F64K512 AB主要特性:

  ›ARM® Cortex™-M4, 120MHz, incl. single cycle DSP MAC and floating point unit (FPU)

  ›8-channel DMA + dedicated DMAs for USB and Ethernet

  ›USB 2.0 full-speed on-the-go

  ›CPU Frequency: 120MHz

  ›eFlash: 512kB including hardware ECC

  ›80kB SRAM

  ›Package: PG-LQFP-64

数字控制板XMC4400-F64K512 AB外形图

  图3.数字控制板XMC4400-F64K512 AB外形图

  数字控制板XMC4400-F64K512 AB应用:

  Motor control

  ›Position detection

  ›IO devices

  ›HMI

  ›Solar inverters

  ›SMPS

  ›Sense & control systems

  ›PLC

  ›UPS

  ›Light networks

  左:MCU板右:辅助转换器板


责任编辑:HanFeng

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