原标题：TI LMG3410氮化镓(GaN) 600V 12A功率级解决方案

　　TI公司的LMG3410是600V/12A单路氮化镓(GaN)功率级,在8x9mm QFN封装中包括70-mΩ 600V GaN功率晶体管和专用的驱动器.高达1MHz稳态工作,传输延迟20ns,单电源12V工作,支持25-100V/ns,集成了DC/DC转换器用来负驱动电压.具有UVLO保护,过流保护和超温保护,主要用在服务器/通信AC/DC电源,太阳能逆变器和马达驱动以及机架安装的服务器DC分布电源.本文介绍了LMG3410主要特性,简化系统框图和典型半桥应用电路图,以及评估板LMG3410-HB-EVM和LMG34XX-BB-EVM主要特性和指标,电路图,材料清单和PCB装配和布局图.

　　The LMG3410 Single-Channel Gallium-Nitride (GaN)Power Stage contains a 70-mΩ, 600-V GaN powertransistor and specialized driver in an 8-mm by 8-mmQFN package. Our Direct Drive architecture is usedto create a normally-off device while providing thenative switching performance of the GaN powertransistor. When the LMG3410 is unpowered, anintegrated low-voltage silicon MOSFET turns the GaNdevice off via its source. In normal operation, the lowvoltagesilicon MOSFET is held on continuously while theGaN device is gated directly from an internallygeneratednegative voltage supply.

　　The integrated driver provides additional protectionand convenience features. Fast over-current, overtemperatureand under-voltage lockout (UVLO)protections help create a fail-safe system; thedevice’s status is indicated by the FAULT output. Aninternal 5-V low-dropout regulator can provide up to 5mA to supply external signal isolators. Finally,externally-adjustable slew rate and a low-inductanceQFN package minimize switching loss, drain ringing,and electrical noise generation.

　　LMG3410-HB-EVM 使用所有必要的辅助外围电路在半桥中配置两个 LMG3410 GaN FET。该 EVM 旨在与更大的系统(如 LMG34XX-BB-EVM 或定制设计的功率级)配合使用。通过在具有便利的连接点的高性能布局上提供 LMG3410，可以快速轻松地实现运行和电路中的测量。

　　无需电平位移或隔离，因为已经包含所有必要的电路。可以通过两种方法生成辅助偏置，默认使用仅需要单个 5V 输入且可配置为通过 12V 电压以引导模式运行的隔离电源。为散热器组合件提供了露铜焊盘，以允许更高的功率耗散。

　　特性

　　输入电压高达 600V

　　用于评估 LMG3410 性能的简单开环设计

　　用于 PWM 信号的单个板载 PWM 输入(死区时间为 50ns)

　　用于使用示波器探针(具有短接地弹簧探针)进行逻辑和功率级测量的便利探测点

　　LMG3410主要特性:

　　• Integrated 70-mΩ, 600-V GaN and Driver

　　• Single Package for Ease of Design and Layout

　　• Up to 1 MHz Steady-State Operation

　　• 20-ns Typical Propagation Delay

　　• Operates From a Single Unregulated 12-V Supply

　　• Externally-Adjustable Drive Strength for SwitchingPerformance and EMI Control

　　– Supports 25 to 100 V/ns

　　• Integrated DC-DC Converter for Negative DriveVoltage

　　• Fault Output Ensures Safety

　　– UVLO Protection

　　– Over-Current Protection

　　– Over-Temperature Protection

　　• High Edge-Rate Tolerance

　　LMG3410应用:

　　• Server/Telecom AC-DC Supplies

　　• Rack-Mount Server DC Power Distribution

　　• Solar Inverters

　　• Motor Drives

　　图1.简化系统框图

　　图2.典型半桥应用电路图

　　LMG34xx GaN系统级评估板LMG34XX-BB-EVM

　　评估板LMG3410-HB-EVM

　　The LMG3410-HB-EVM features two LMG3410 600V/12A GaN power transistors with integrated driversthat are configured in a half bridge with all the required bias circuit and logic/power level shifting. Essentialpower stage and gate driving high frequency current loops are fully enclosed on the board to minimizeparasitic inductances, reducing voltage overshoots and improving performance. The LMG3410-HB-EVM isconfigured to have a socket style external connection for easy interface with external power stages to runthe LMG3410 in various applications.

　　The LMG3410-HB-EVM is designed for use in AC/DC, DC/DC and DC/AC applications

　　• Totem-Pole PFC converters

　　• Phase-Shifted Full Bridge or LLC Converter

　　• Buck converter such as the LMG34XX-BB-EVM

　　评估板LMG3410-HB-EVM主要特性和指标:

　　• Two options to bias the LMG3410, isolated power or from bootstrap diode

　　• Over temperature, overcurrent, and under voltage lockout protection with FAULT indication that is levelshifted to an AGND referenced signal

　　• Gate logic input support of either 3.3V or 5V logic

　　• Maximum recommended operating voltage of 480V and absolute maximum voltage of 600V

　　评估板LMG34XX-BB-EVM主要特性和指标:

　　• Requires only a single 12V bias supply

　　• Requires only a single 0V to 5V PWM input to generate gate drive signal

　　• PWM disable in the event of a fault from the LMG3410-HB-EVM

　　• Maximum recommended operating voltage of 480V and absolute maximum voltage of 600V

　　• Maximum recommended operating inductor current of 8A

　　LMG34XX-BB-EVM

　　To allow for quick operation the LMG34XX-BB-EVM is available to interface with the LMG3410-HB-EVM.

　　This mother board is designed to operate the LMG3410 as a synchronous open loop buck converter. Easyprobe locations are provided for measurement of logic and power stage voltages.

　　1. Bias Supply

　　The motherboard requires one 12V bias supply. A linear drop off regulator steps the voltage down to atightly regulated 5V for logic and auxiliary power of the LMG3410 when the LMG3410-HB-EVM isconfigured in isolated power mode. When the LMG3410-HB-EVM is configured in bootstrap mode the 12Vinput is used to power the two LMG3410 devices.

　　2.Logic PWM Input

　　The LMG34XX-BB-EVM supports a single PWM, with complimentary signal and corresponding dead timegenerated on board. A 0 V to 5 V magnitude input square wave is required. The complementary PWMgeneration circuit creates 50 ns of dead time between both transitions of the PWM signals.

　　图3.评估板LMG3410-HB-EVM正面和背面外形图

　　图4.评估板LMG3410-HB-EVM和LMG34xx-BB-EVM连接图

　　评估板LMG3410-HB-EVM材料清单:

　　评估板LMG34XX-BB-EVM材料清单:

　　详情请见:

mg3410.pdf

snou140a.pdf